2N3439 STMicroelectronics, 2N3439 Datasheet

TRANSISTOR NPN 450V 1A TO-39

2N3439

Manufacturer Part Number
2N3439
Description
TRANSISTOR NPN 450V 1A TO-39
Manufacturer
STMicroelectronics
Type
Driver, High Voltage, Switchr
Datasheets

Specifications of 2N3439

Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
350V
Vce Saturation (max) @ Ib, Ic
500mV @ 4mA, 50mA
Current - Collector Cutoff (max)
20µA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 20mA, 10V
Power - Max
1W
Frequency - Transition
15MHz
Mounting Type
Through Hole
Package / Case
TO-39-3, TO-205AD, Metal Can
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
350 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
1 A
Power Dissipation
10000 mW
Continuous Collector Current
1 A
Dc Collector/base Gain Hfe Min
30
Maximum Operating Frequency
15 MHz
Current, Base
0.5 A
Current, Collector
1 A
Current, Collector Cutoff
20 μA (Max.)
Current, Gain
160
Frequency
15 MHz
Gain, Dc Current, Maximum
160
Gain, Dc Current, Minimum
40
Package Type
TO-39
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
17.5 °C/W
Temperature, Operating, Maximum
200 °C
Thermal Resistance, Junction To Ambient
175 °C/W
Voltage, Breakdown, Collector To Emitter
350 V
Voltage, Collector To Base
450 V
Voltage, Collector To Emitter
350 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
7 V
Voltage, Saturation, Collector To Emitter
0.5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2576-5

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Part Number
Manufacturer
Quantity
Price
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DESCRIPTION
The 2N3439 and 2N3440 are silicon epitaxial
planar NPN transistors in jedec TO-39 metal case
designed for use in consumer and industrial
line-operated applications.
These devices are particularly suited as drivers in
high-voltage low current inverters, switching and
series regulators.
ABSOLUTE MAXIMUM RATINGS
December 2000
Symbol
STMicroelectronics PREFERRED
SALESTYPES
V
V
V
NPN TRANSISTOR
T
P
P
CBO
CEO
EBO
I
I
T
stg
C
B
tot
tot
j
Collector-Base Voltage (I
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Base Current
Total Dissipation at T
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
c
amb
C
25
E
= 0)
= 0)
50
B
o
C
= 0)
o
C
SILICON NPN TRANSISTORS
INTERNAL SCHEMATIC DIAGRAM
2N3439
450
350
-65 to 200
Value
200
0.5
10
7
1
1
TO-39
2N3440
300
250
2N3439
2N3440
Unit
o
o
W
W
V
V
V
A
A
C
C
1/4

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2N3439 Summary of contents

Page 1

... STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators ...

Page 2

... V = 300 V CE for 2N3440 V = 200 V CE for 2N3439 V = 450 V CE for 2N3440 V = 300 for 2N3439 for 2N3440 for 2N3439 1KHz 5MHz C CE Max 17.5 Max 175 Min. Typ. Max 500 500 20 350 250 0.5 1.3 40 160 C/W o C/W Unit ...

Page 3

... TO-39 MECHANICAL DATA DIM. MIN TYP. MAX. MIN. 0.500 0.49 6.6 8.5 9.4 0.200 1.2 0 (typ 2N3439 / 2N3440 inch TYP. MAX. 0.019 0.260 0.334 0.370 0.047 0.035 A P008B 3/4 ...

Page 4

... Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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