MJ11022G ON Semiconductor, MJ11022G Datasheet - Page 4

• Manufacturer Part Number: MJ11022G
• Description: TRANS DARL NPN 15A 250V TO-3
• Manufacturer: ON Semiconductor

Specifications of MJ11022G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 3.4V @ 150mA, 15A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 400 @ 10A, 5V
• Power - Max: 175W
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: MJ11022G; MJ11022GOS

10,000
7000
5000
3000
2000
1000
700
500
300
200
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.5
0.1
0.2
PNP
PNP
PNP
0.7 1.0
T
0.3
J
0.2 0.3 0.5
= 25°C
T
J
= 25°C
I
C
2.0 3.0 5.0
V
0.5
BE(sat)
= 5.0 A
0.7
COLLECTOR CURRENT (AMPS)
V
0.7 1.0
I
C
BE
@ I
, COLLECTOR CURRENT (A)
T
I
B
J
@ V
T
1.0
, BASE CURRENT (mA)
C
J
= - 55°C
/I
7.0
= 150°C
B
CE
I
= 100
C
2.0 3.0 5.0
10
= 5.0 V
= 10 A
2.0
V
CE(sat)
20
I
30
3.0
C
7.0
= 15 A
@ I
50
C
10
/I
5.0
Figure 7. Collector Saturation Region
B
70
= 100
100
20
7.0
V
CE
30
Figure 6. DC Current Gain
T
Figure 8. “On” Voltages
200
J
10
= 5.0 Vdc
= 25°C
http://onsemi.com
50
300
15
500
70
20
4
30,000
20,000
10,000
7000
5000
3000
2000
1000
700
500
300
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.5
0.2
0.1
NPN
NPN
NPN
0.7 1.0
V
T
T
0.3
BE(sat)
I
J
C
J
0.2 0.3 0.5
= 25°C
= 25°C
= 5.0 A
V
BE
@ I
0.5
2.0 3.0 5.0
@ V
C
/I
0.7
B
CE
COLLECTOR CURRENT (AMPS)
I
0.7 1.0
T
= 100
C
J
, COLLECTOR CURRENT (A)
= 5.0 V
I
= 150°C
1.0
B
I
C
, BASE CURRENT (mA)
= 10 A
7.0
T
J
= - 55°C
2.0 3.0 5.0
10
2.0
20
V
I
C
CE(sat)
3.0
30
= 15 A
7.0
50
@ I
10
5.0
C
70
/I
B
V
7.0
100
20
= 100
CE
30
= 5.0 Vdc
T
10
200
J
= 25°C
50
300
15
500
20