MJ11022G ON Semiconductor, MJ11022G Datasheet - Page 2

• Manufacturer Part Number: MJ11022G
• Description: TRANS DARL NPN 15A 250V TO-3
• Manufacturer: ON Semiconductor

Specifications of MJ11022G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 3.4V @ 150mA, 15A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 400 @ 10A, 5V
• Power - Max: 175W
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: MJ11022G; MJ11022GOS

1. Pulsed Test: Pulse Width = 300 ms, Duty Cycle v 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I
Collector Cutoff Current
(V
Collector Cutoff Current
(V
(V
Emitter Cutoff Current (V
DC Current Gain
(I
(I
Collector−Emitter Saturation Voltage
(I
(I
Base−Emitter On Voltage
I
Base−Emitter Saturation Voltage
(I
Current−Gain Bandwidth Product
(I
Output Capacitance (V
Small−Signal Current Gain
(I
Delay Time
Rise Time
Storage Time
Fall Time
C
C
C
C
C
C
C
C
C
200
150
100
CE
CE
CE
50
= 10 A, V
= 0.1 Adc, I
= 10 Adc, V
= 15 Adc, V
= 10 Adc, I
= 15 Adc, I
= 15 Adc, I
= 10 Adc, V
= 10 Adc, V
0
= 125, I
= Rated V
= Rated V
0
25
CE
B
B
B
B
B
= 0)
CE
CE
= 5.0 Vdc)
CE
CE
CB
CB
= 100 mA)
= 150 mA)
= 150 mA)
= 0)
, V
, V
= 5.0 Vdc)
= 5.0 Vdc)
= 3.0 Vdc, f = 1.0 MHz)
= 3.0 Vdc, f = 1.0 kHz)
50
Figure 1. Power Derating
BE(off)
BE(off)
T
C
CB
, CASE TEMPERATURE (°C)
BE
75
= 10 Vdc, I
= 1.5 Vdc)
= 1.5 Vdc, T
= 5.0 Vdc, I
100
Characteristic
E
Characteristic
= 0, f = 0.1 MHz)
(V
C
J
125
= 150_C)
= 0)
CC
(T
V
C
BE(off)
= 100 V, I
= 25_C unless otherwise noted)
150
= 50 V) (See Figure 2)
C
175
= 10 A, I
http://onsemi.com
200
B
= 100 mA
2
MJ11021, MJ11022
MJ11021, MJ11022
APPROX
APPROX
- 8.0 V
+12 V
V2
V1
For NPN test circuit reverse diode and voltage polarities.
0
t
DUTY CYCLE = 1.0%
r
, t
R
f
D
B
≤ 10 ns
1
and R
1N5825 USED ABOVE I
MSD6100 USED BELOW I
MUST BE FAST RECOVERY TYPE, e.g.:
MJ11022
MJ11021
Figure 2. Switching Times Test Circuit
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
25 ms
V
Symbol
Symbol
V
V
V
CEO(sus)
I
CE(sat)
BE(sat)
I
I
BE(on)
[h
B
h
C
CEO
EBO
CEV
h
t
t
≈ 100 mA
t
FE
t
B
fe
ob
fe
d
s
r
f
51
≈ 100 mA
]
R
for t
and V2 = 0
B
D
+ 4.0 V
1
d
and t
NPN
10.0
Min
250
400
100
150
3.0
1.2
4.4
75
−
−
−
−
−
−
−
−
−
−
r
, D
≈ 10 K
Typical
1
is disconnected
15,000
TUT
PNP
Max
400
600
1.0
0.5
5.0
2.0
2.0
3.4
2.8
3.8
0.5
2.7
2.5
≈ 8.0
75
−
−
−
−
100 V
R
V
C
CC
mAdc
mAdc
mAdc
Unit
Mhz
Unit
Vdc
Vdc
Vdc
Vdc
pF
ns
ms
ms
ms
−
−
SCOPE