MJL4281AG ON Semiconductor, MJL4281AG Datasheet - Page 4

• Manufacturer Part Number: MJL4281AG
• Description: TRANS BIPO NPN 15A 350V TO264
• Manufacturer: ON Semiconductor

Specifications of MJL4281AG

• Transistor Type: NPN
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 1V @ 800mA, 8A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5A, 5V
• Power - Max: 230W
• Frequency - Transition: 35MHz
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-3BPL
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 350 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 15 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 15 A
• Dc Collector/base Gain Hfe Min: 80
• Maximum Operating Frequency: 35 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJL4281AGOS

0.01
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
70
60
50
40
30
20
10
10
Figure 9. Typical Current Gain Bandwidth Product,
0
1
0.01
0.1
1
Figure 11. Active Region Safe Operating Area,
T
f
T
test
J
J
= 25°C
= 25°C
Figure 7. Typical Base−Emitter Voltages,
= 1 MHz
V
ce
, COLLECTOR−EMITTER VOLTAGE (V)
I
I
C
C
0.1
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
V
NPN MJL4281A
NPN MJL4281A
10
NPN MJL4281A
CE
1 Sec
= 5 V
100 mS
1
V
1
10 mS
CE
MJL4281A (NPN) MJL4302A (PNP)
= 10 V
100
TYPICAL CHARACTERISTICS
10
http://onsemi.com
100
1000
10
4
0.01
Figure 10. Typical Current Gain Bandwidth Product,
100
0.1
2.5
2.0
1.5
1.0
0.5
0.0
10
70
60
50
40
30
20
10
1
0
0.01
0.1
1
Figure 12. Active Region Safe Operating Area,
T
T
f
J
test
J
= 25°C
Figure 8. Typical Base−Emitter Voltages,
= 25°C
= 1 MHz
V
ce
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
0.1
, COLLECTOR CURRENT (A)
V
PNP MJL4302A
CE
10
PNP MJL4302A
PNP MJL4302A
1 Sec
= 5 V
100 mS
10 mS
1
1
V
CE
= 10 V
100
10
1000
100
10