MJL4281AG ON Semiconductor, MJL4281AG Datasheet - Page 2

• Manufacturer Part Number: MJL4281AG
• Description: TRANS BIPO NPN 15A 350V TO264
• Manufacturer: ON Semiconductor

Specifications of MJL4281AG

• Transistor Type: NPN
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 1V @ 800mA, 8A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5A, 5V
• Power - Max: 230W
• Frequency - Transition: 35MHz
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-3BPL
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 350 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 15 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 15 A
• Dc Collector/base Gain Hfe Min: 80
• Maximum Operating Frequency: 35 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJL4281AGOS

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
SECOND BREAKDOWN
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector Emitter Sustaining Voltage
Collector Cut−off Current
Collector Cutoff Current
Emitter Cutoff Current
Second Breakdown Collector with Base Forward Biased
DC Current Gain
Collector−Emitter Saturation Voltage
Emitter−Base Saturation Voltage
Base−Emitter ON Voltage
Current−Gain − Bandwidth Product
Output Capacitance
(I
(V
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
C
C
C
C
C
C
C
C
C
C
C
CE
CB
EB
CE
CE
CB
= 50 mA, I
= 100 mAdc, V
= 1.0 Adc, V
= 3.0 Adc, V
= 5.0 Adc, V
= 8.0 Adc, V
= 15 Adc, V
= 8.0 Adc, I
= 8.0 Adc, I
= 8.0 Adc, V
= 1.0 Adc, V
= 5.0 Vdc, I
= 200 V, I
= 350 Vdc, I
= 50 Vdc, t = 1.0 s (non−repetitive)
= 100 Vdc, t = 1.0 s (non−repetitive)
= 10 Vdc, I
B
B
B
B
CE
= 0)
CE
CE
CE
CE
CE
CE
E
= 0)
= 0.8 Adc)
= 0.8 A)
C
E
= 0, f
CE
= 5.0 Vdc)
= 0)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc, f
= 0)
= 5.0 Vdc)
test
= 1.0 MHz)
test
Characteristic
= 1.0 MHz)
(T
MJL4281A (NPN) MJL4302A (PNP)
C
= 25°C unless otherwise noted)
http://onsemi.com
2
Symbol
V
V
V
V
CE(sus)
I
I
I
CE(sat)
BE(sat)
BE(on)
h
C
CEO
CBO
EBO
I
S/b
f
FE
T
ob
Min
350
4.5
1.0
80
80
80
80
50
10
35
−
−
−
−
−
−
Max
100
250
250
250
250
600
5.0
1.0
1.4
1.5
50
−
−
−
−
−
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Adc
Vdc
Vdc
Vdc
pF
−