MJL4281AG ON Semiconductor, MJL4281AG Datasheet

MJL4281AG

Manufacturer Part Number

MJL4281AG

Description

TRANS BIPO NPN 15A 350V TO264

Manufacturer

ON Semiconductor

Datasheet

1.MJL4281AG.pdf (5 pages)

Specifications of MJL4281AG

Transistor Type

NPN

Current - Collector (ic) (max)

15A

Voltage - Collector Emitter Breakdown (max)

350V

Vce Saturation (max) @ Ib, Ic

1V @ 800mA, 8A

Current - Collector Cutoff (max)

100µA

Dc Current Gain (hfe) (min) @ Ic, Vce

80 @ 5A, 5V

Power - Max

230W

Frequency - Transition

35MHz

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-3BPL

Transistor Polarity

NPN

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

350 V

Emitter- Base Voltage Vebo

5 V

Maximum Dc Collector Current

15 A

Power Dissipation

230 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

15 A

Dc Collector/base Gain Hfe Min

Maximum Operating Frequency

35 MHz

Minimum Operating Temperature

- 65 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MJL4281AGOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MJL4281AG

Manufacturer:

Quantity:

12 500

Current page: 1 of 5
Download datasheet (64Kb)

MJL4281A (NPN)

MJL4302A (PNP)

Complementary NPN−PNP

Silicon Power Bipolar

Transistors

for high power audio.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

*For additional information on our Pb−Free strategy and soldering details, please

January, 2006 − Rev. 2

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector−Emitter Voltage − 1.5 V

Collector Current − Continuous

Collector Current

Base Current − Continuous

Total Power Dissipation @ T

Operating and Storage Junction

Thermal Resistance, Junction−to−Case

The MJL4281A and MJL4302A are PowerBaset power transistors

350 V Collector−Emitter Sustaining Voltage

Gain Complementary:

Low Harmonic Distortion

High Safe Operation Area − 1.0 A/100 V @ 1 Second

High f

Pb−Free Packages are Available*

Derate Above 25°C

Temperature Range

Gain Linearity from 100 mA to 5 A

High Gain − 80 to 240

= 50 (min) @ I

Characteristic

Rating

− Peak (Note 1)

= 25°C unless otherwise noted)

Preferred Device

= 8 A

= 25°C

Symbol

, T

CEO

CBO

EBO

CEX

qJC

stg

− 65 to +150

Value

1.84

Max

0.54

350

230

5.0

1.5

°C/W

Unit

Vdc

Adc

°C

Preferred devices are recommended choices for future use

and best overall value.

MJL4281A

MJL4281AG

MJL4302A

MJL4302AG

COMPLEMENTARY SILICON

Device

POWER TRANSISTORS

350 VOLTS, 230 WATTS

ORDERING INFORMATION

xxx

1 BASE

MARKING DIAGRAM

http://onsemi.com

15 AMPERES

= 281 or 302

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Pb−Free)

Package

TO−264

MJL4xxxA

AYYWWG

2 COLLECTOR

Publication Order Number:

CASE 340G

STYLE 2

TO−264

3 EMITTER

25 Units/Rail

Shipping

MJL4281A/D

Related parts for MJL4281AG

MJL4281AG Summary of contents

Page 1

... − +150 J stg Symbol Max Unit °C/W R 0.54 qJC MJL4281A MJL4281AG MJL4302A MJL4302AG Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS TO−264 CASE 340G ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS Collector Emitter Sustaining Voltage ( mA Collector Cut−off Current (V = 200 Collector Cutoff Current (V = 350 Vdc ...

Page 3

MJL4281A (NPN) MJL4302A (PNP) 1000 T = 100° 25°C J 100 10 0.01 0 COLLECTOR CURRENT (A) C Figure 1. DC Current Gain, V NPN MJL4281A 1000 T = 100° 25°C ...

Page 4

MJL4281A (NPN) MJL4302A (PNP) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.01 0 COLLECTOR CURRENT (A) C Figure 7. Typical Base−Emitter Voltages, NPN MJL4281A ...

Page 5

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. ...

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