PBSS4160T,215 NXP Semiconductors, PBSS4160T,215 Datasheet - Page 7

• Manufacturer Part Number: PBSS4160T,215
• Description: TRANS NPN 60V 1A SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160T,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V
• Power - Max: 400mW
• Frequency - Transition: 220MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 250
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 270 mW
• Maximum Operating Frequency: 220 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4343-2; 934057667215; PBSS4160T T/R; PBSS4160T T/R

NXP Semiconductors
2004 May 12
handbook, halfpage
60 V, 1 A
NPN low V
T
(1) I
(2) I
(3) I
(4) I
Fig.10 Collector current as a function of
amb
(A)
1.6
1.2
0.8
0.4
I C
= 25 °C.
B
B
B
B
2
0
= 60 mA.
= 54 mA.
= 48 mA.
= 42 mA.
0
collector-emitter voltage; typical values.
1
CEsat
(6)
(5) I
(6) I
(7) I
(8) I
(5)
2
B
B
B
B
(4)
= 36 mA.
= 30 mA.
= 24 mA.
= 18 mA.
(BISS) transistor
(3)
3
(2)
(10)
(1)
(7)
(8)
(9)
(9) I
(10) I
4
V CE (V)
B
B
MLE131
= 12 mA.
= 6 mA.
5
7
handbook, halfpage
R CEsat
I
(1) T
Fig.11 Equivalent on-resistance as a function of
C
/I
(Ω)
B
10
10
10
= 20.
10
−1
amb
10
1
3
2
−1
= 100 °C.
collector current; typical values.
1
(2) T
10
amb
(2)
= 25 °C.
10
(1)
(3)
2
PBSS4160T
Product data sheet
10
(3) T
3
I C (mA)
MLE132
amb
= −55 °C.
10
4