PBSS4160T,215 NXP Semiconductors, PBSS4160T,215 Datasheet - Page 2

TRANS NPN 60V 1A SOT23

PBSS4160T,215

Manufacturer Part Number
PBSS4160T,215
Description
TRANS NPN 60V 1A SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4160T,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
250mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 500mA, 5V
Power - Max
400mW
Frequency - Transition
220MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
250
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1 A
Maximum Dc Collector Current
2 A
Power Dissipation
270 mW
Maximum Operating Frequency
220 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4343-2
934057667215
PBSS4160T T/R
PBSS4160T T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS4160T,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
FEATURES
• Low collector-emitter saturation voltage V
• High collector current capability I
• High efficiency, reduces heat generation
• Reduces printed-circuit board area required
• Cost effective replacement for medium power transistor
APPLICATIONS
• Major application segments:
• Power management:
• Peripheral driver
DESCRIPTION
NPN low V
PNP complement: PBSS5160T.
MARKING
Note
1. * = p: made in Hong Kong
ORDERING INFORMATION
2004 May 12
PBSS4160T
PBSS4160T
TYPE NUMBER
BCP55 and BCX55.
– Automotive 42 V power
– Telecom infrastructure
– Industrial.
– DC-to-DC conversion
– Supply line switching.
– Driver in low supply voltage applications (e.g. lamps
– Inductive load driver (e.g. relays,
60 V, 1 A
NPN low V
* = t: made in Malaysia
* = W: made in China.
and LEDs)
buzzers and motors).
TYPE NUMBER
CEsat
transistor in a SOT23 plastic package.
CEsat
NAME
(BISS) transistor
*U5
MARKING CODE
C
and I
plastic surface mounted package; 3 leads
CM
CEsat
(1)
2
QUICK REFERENCE DATA
PINNING
handbook, halfpage
DESCRIPTION
V
I
I
R
SYMBOL
C
CM
CEO
CEsat
PACKAGE
Fig.1 Simplified outline (SOT23) and symbol.
Top view
PIN
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
1
2
3
1
PARAMETER
3
base
emitter
collector
2
MAM255
DESCRIPTION
PBSS4160T
Product data sheet
1
60
1
2
250
MAX.
VERSION
SOT23
3
2
V
A
A
UNIT

Related parts for PBSS4160T,215