2N5416 STMicroelectronics, 2N5416 Datasheet - Page 2

• Manufacturer Part Number: 2N5416
• Description: TRANSISTOR PNP -350V -1A TO-39
• Manufacturer: STMicroelectronics
• Type: Driver, High Voltage, Switchr

Specifications of 2N5416

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 2.5V @ 5mA, 50mA
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 50mA, 10V
• Power - Max: 1W
• Frequency - Transition: 15MHz
• Mounting Type: Through Hole
• Package / Case: TO-39-3, TO-205AD, Metal Can
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 10 W
• Maximum Operating Frequency: 15 MHz
• Dc Collector/base Gain Hfe Min: 30
• Current, Base: -0.5 A
• Current, Collector: -1 A
• Current, Collector Cutoff: -50 μA
• Current, Gain: 120
• Frequency: 15 MHz
• Gain, Dc Current, Maximum: 120
• Gain, Dc Current, Minimum: 30
• Package Type: TO-39
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 17.5 °C/W
• Voltage, Breakdown, Collector To Emitter: -300 V
• Voltage, Collector To Base: -350 V
• Voltage, Collector To Emitter: -300 V
• Voltage, Collector To Emitter, Saturation: -2.5 V
• Voltage, Emitter To Base: -6 V
• Voltage, Saturation, Collector To Emitter: -2.5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2596-5

2N5415 / 2N5416
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/4
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
Symbol
R
R
CEO(sus)
V
CE(sat)
C
V
thj-case
h
I
I
I
thj-amb
CER
CBO
CEO
EBO
h
BE
FE
CBO
f
T
fe
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Collector Cut-off
Current (I
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Small Signal Current
Gain
Transition frequency
Collector Base
Capacitance
C
= 0)
Parameter
E
B
= 0)
= 0)
for 2N5415
for 2N5416
V
for 2N5415
for 2N5416
I
I
for 2N5415
for 2N5416
I
I
I
for 2N5415
for 2N5416
I
I
I
C
C
C
C
C
C
C
E
CE
= 0
= -50 mA R
= -10 mA
= -50 mA
= -50 mA
= -50 mA
= -5 mA
= -10 mA V
= -150 V
case
V
= 25
Test Conditions
CB
V
= -10 V
V
V
V
V
o
CE
CE
C unless otherwise specified)
CB
CB
EB
EB
BE
I
V
V
B
CE
CE
= -10 V
= 50
= -10 V
= -4 V
= -6 V
= -5 mA
= -175 V
= -280 V
= -10 V
= -10 V
f = 1MHz
for 2N5416
f = 5MHz
f = 1KHz
Max
Max
Min.
-350
-200
-300
25
15
30
30
Typ.
17.5
175
Max.
-2.5
-1.5
150
120
-50
-50
-50
-20
-20
25
o
o
Unit
MHz
C/W
C/W
pF
V
V
V
V
V
A
A
A
A
A