2N5416 STMicroelectronics, 2N5416 Datasheet
2N5416
Manufacturer Part Number
2N5416
Description
TRANSISTOR PNP -350V -1A TO-39
Manufacturer
STMicroelectronics
Type
Driver, High Voltage, Switchr
Specifications of 2N5416
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
2.5V @ 5mA, 50mA
Current - Collector Cutoff (max)
50µA
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 50mA, 10V
Power - Max
1W
Frequency - Transition
15MHz
Mounting Type
Through Hole
Package / Case
TO-39-3, TO-205AD, Metal Can
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
- 6 V
Continuous Collector Current
- 1 A
Maximum Dc Collector Current
1 A
Power Dissipation
10 W
Maximum Operating Frequency
15 MHz
Dc Collector/base Gain Hfe Min
30
Current, Base
-0.5 A
Current, Collector
-1 A
Current, Collector Cutoff
-50 μA
Current, Gain
120
Frequency
15 MHz
Gain, Dc Current, Maximum
120
Gain, Dc Current, Minimum
30
Package Type
TO-39
Polarity
PNP
Primary Type
Si
Resistance, Thermal, Junction To Case
17.5 °C/W
Voltage, Breakdown, Collector To Emitter
-300 V
Voltage, Collector To Base
-350 V
Voltage, Collector To Emitter
-300 V
Voltage, Collector To Emitter, Saturation
-2.5 V
Voltage, Emitter To Base
-6 V
Voltage, Saturation, Collector To Emitter
-2.5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2596-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N5416
Manufacturer:
MOT/ST
Quantity:
1 000
Part Number:
2N5416
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
2N5416JANTX
Manufacturer:
Microsemi
Quantity:
1 400
DESCRIPTION
The 2N5415, 2N5416 are high voltage silicon
epitaxial planar PNP transistors in Jedec TO-39
metal case designed for use in consumer and
industrial line-operated applications.
These devices are particularly suited as drivers in
high-voltage low current inverters, switching and
series regulators.
ABSOLUTE MAXIMUM RATINGS
Symbol
STMicroelectronics PREFERRED
SALESTYPES
PNP TRANSISTORS
V
V
V
T
P
P
CBO
CEO
EBO
I
I
stg
C
B
tot
tot
Collector-Base Voltage (I
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Base Current
Total Dissipation at T
Total Dissipation at T
Storage Temperature
®
Parameter
c
amb
C
25
E
= 0)
= 0)
50
B
o
C
= 0)
o
C
SILICON PNP TRANSISTORS
INTERNAL SCHEMATIC DIAGRAM
2N5415
-200
-200
-4
-65 to 200
Value
-0.5
10
-1
1
TO-39
2N5416
-350
-300
-6
2N5415
2N5416
Unit
o
W
W
V
V
V
A
A
C
1/4
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2N5416 Summary of contents
Page 1
... STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators ...
Page 2
... THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Collector Cut-off CEO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CER Sustaining Voltage V Collector-Emitter CEO(sus) Sustaining Voltage V Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter Voltage ...
Page 3
... TO-39 MECHANICAL DATA DIM. MIN TYP. MAX. MIN. 0.500 0.49 6.6 8.5 9.4 0.200 1.2 0 (typ 2N5415 / 2N5416 inch TYP. MAX. 0.019 0.260 0.334 0.370 0.047 0.035 A P008B 3/4 ...