PBSS2515E,115 NXP Semiconductors, PBSS2515E,115 Datasheet - Page 7

• Manufacturer Part Number: PBSS2515E,115
• Description: TRANS NPN 15V .5A LOW SAT SC75
• Manufacturer: NXP Semiconductors

Specifications of PBSS2515E,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 100mA, 2V
• Power - Max: 250mW
• Frequency - Transition: 420MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4148-2; 934059166115; PBSS2515E T/R; PBSS2515E T/R

NXP Semiconductors
PBSS2515E_2
Product data sheet
Fig 8.
Fig 10. Collector-emitter saturation resistance as a
R
V
CEsat
( )
CEsat
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
10
10
10
10
10
10
1
1
2
1
10
10
1
2
3
I
Collector-emitter saturation voltage as a
function of collector current; typical values
I
function of collector current; typical values
C
C
amb
amb
amb
amb
amb
amb
1
1
/I
/I
B
B
= 20
= 20
= 100 C
= 25 C
= 55 C
= 100 C
= 25 C
= 55 C
1
1
(1)
(2)
(3)
10
10
10
10
(1)
(2)
(3)
2
2
I
I
006aaa369
C
C
006aaa366
(mA)
(mA)
10
10
Rev. 02 — 21 April 2009
3
3
Fig 9.
Fig 11. Collector-emitter saturation resistance as a
R
V
CEsat
( )
CEsat
(V)
(1) I
(2) I
(3) I
10
(1) I
(2) I
(3) I
10
10
10
10
10
10
1
1
3
2
1
10
10
1
2
3
T
Collector-emitter saturation voltage as a
function of collector current; typical values
T
function of collector current; typical values
15 V, 0.5 A NPN low V
C
C
C
C
C
C
amb
amb
1
/I
/I
/I
/I
/I
/I
1
B
B
B
B
B
B
= 100
= 50
= 10
= 100
= 50
= 10
= 25 C
= 25 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
PBSS2515E
CEsat
10
10
© NXP B.V. 2009. All rights reserved.
2
2
(BISS) transistor
I
I
006aaa371
C
C
006aaa367
(mA)
(mA)
10
10
3
3
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