PBSS2515E,115 NXP Semiconductors, PBSS2515E,115 Datasheet - Page 4

• Manufacturer Part Number: PBSS2515E,115
• Description: TRANS NPN 15V .5A LOW SAT SC75
• Manufacturer: NXP Semiconductors

Specifications of PBSS2515E,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 100mA, 2V
• Power - Max: 250mW
• Frequency - Transition: 420MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4148-2; 934059166115; PBSS2515E T/R; PBSS2515E T/R

NXP Semiconductors
PBSS2515E_2
Product data sheet
Fig 2.
Fig 3.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
10
3
2
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for collector 1 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
duty cycle =
duty cycle =
5
5
1
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
1
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
0.75
0.75
10
10
4
4
10
10
3
3
10
10
2
2
2
Rev. 02 — 21 April 2009
10
10
1
1
15 V, 0.5 A NPN low V
1
1
10
10
PBSS2515E
CEsat
10
10
2
2
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
t
p
p
006aab472
006aaa413
(s)
(s)
10
10
3
3
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