BC847BST/R NXP Semiconductors, BC847BST/R Datasheet - Page 5

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BC847BST/R

Manufacturer Part Number
BC847BST/R
Description
Trans GP BJT NPN 45V 0.1A 6-Pin SOT-363 T/R
Manufacturer
NXP Semiconductors
Type
NPNr
Datasheet

Specifications of BC847BST/R

Package
6SOT-363
Supplier Package
SOT-363
Pin Count
6
Minimum Dc Current Gain
200@2mA@5V
Maximum Operating Frequency
100(Min) MHz
Maximum Dc Collector Current
0.1 A
Maximum Base Emitter Saturation Voltage
0.755(Typ)@0.5mA@10mA V
Maximum Collector Emitter Saturation Voltage
0.1@0.5mA@10mA|0.3@5mA@100mA V
Maximum Collector Base Voltage
50 V
Maximum Collector Emitter Voltage
45 V
Maximum Emitter Base Voltage
5 V
NXP Semiconductors
7. Characteristics
BC847BS_3
Product data sheet
Fig 3.
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
FR4 PCB, mounting pad for collector 1 cm
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
5
0.50
0.20
0.05
0.01
= 1
0
0.75
0.33
0.10
0.02
10
4
Table 7.
T
[1]
Symbol Parameter
Per transistor
I
I
h
V
V
V
C
C
f
CBO
EBO
T
amb
FE
CEsat
BEsat
BE
c
e
Pulse test: t
= 25 C unless otherwise specified.
10
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage I
collector capacitance I
emitter capacitance
transition frequency
Characteristics
3
p
300 s;
10
2
Rev. 03 — 18 February 2009
2
0.02.
Conditions
V
V
T
V
V
I
I
I
f = 1 MHz
I
f = 1 MHz
I
f = 100 MHz
C
C
C
C
E
C
C
CB
CB
j
EB
CE
10
= 150 C
= i
= 10 mA; I
= 100 mA; I
= 10 mA; I
= 2 mA; V
= i
= 10 mA; V
= 5 V; I
= 30 V; I
= 30 V; I
= 5 V; I
1
e
c
45 V, 100 mA NPN/NPN general-purpose transistor
= 0 A; V
= 0 A; V
C
C
CE
B
B
E
E
= 0 A
= 2 mA
CE
B
= 0.5 mA
= 0.5 mA
CB
EB
= 0 A
= 0 A;
= 5 V
= 5 mA
1
= 5 V;
= 0.5 V;
= 10 V;
[1]
10
Min
-
-
-
200
-
-
-
580
-
-
100
Typ
-
-
-
-
-
-
755
655
-
11
-
10
2
BC847BS
© NXP B.V. 2009. All rights reserved.
t
p
006aab421
(s)
Max
15
5
100
450
100
300
-
700
1.5
-
-
10
3
Unit
nA
nA
mV
mV
mV
mV
pF
pF
MHz
A
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