BC847BST/R NXP Semiconductors, BC847BST/R Datasheet - Page 3

• Manufacturer Part Number: BC847BST/R
• Description: Trans GP BJT NPN 45V 0.1A 6-Pin SOT-363 T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BC847BST/R

• Package: 6SOT-363
• Supplier Package: SOT-363
• Pin Count: 6
• Minimum Dc Current Gain: 200@2mA@5V
• Maximum Operating Frequency: 100(Min) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.755(Typ)@0.5mA@10mA V
• Maximum Collector Emitter Saturation Voltage: 0.1@0.5mA@10mA|0.3@5mA@100mA V
• Maximum Collector Base Voltage: 50 V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
5. Limiting values
BC847BS_3
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Symbol
Per transistor
V
V
V
I
I
I
P
Per device
P
T
T
T
C
CM
BM
Fig 1.
j
amb
stg
CBO
CEO
EBO
tot
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
(1) FR4 PCB, mounting pad for collector 1 cm
(2) FR4 PCB, standard footprint
Per device: Power derating curves SOT363 (SC-88)
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
(mW)
Rev. 03 — 18 February 2009
P
tot
500
400
300
200
100
0
75
25
(1)
(2)
45 V, 100 mA NPN/NPN general-purpose transistor
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
T
p
p
amb
amb
25
1 ms
1 ms
25 C
25 C
2
75
125
T
006aab419
amb
[1]
[2]
[1]
[2]
( C)
175
Min
-
-
-
-
-
-
-
-
-
-
-
65
65
BC847BS
© NXP B.V. 2009. All rights reserved.
Max
50
45
5
100
200
200
220
250
300
400
150
+150
+150
Unit
V
V
V
mA
mA
mA
mW
mW
mW
mW
2
C
C
C
.
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