BGD714 NXP Semiconductors, BGD714 Datasheet - Page 4

• Manufacturer Part Number: BGD714
• Description: RF Amp Module Single GP Amp 750MHz 30V 7-Pin SOT-115J Bulk
• Manufacturer: NXP Semiconductors
• Type: General Purpose Amplifierr

Specifications of BGD714

• Package: 7SOT-115J
• Typical Power Gain: 21.3@750MHz dB
• Maximum Output Return Loss: 17(Min)@790MHz dB
• Maximum Supply Voltage: 30 V
• Operating Frequency: 750 MHz
• Noise Figure: 7 dB at 750 MHz
• Supply Current: 410 mA
• Maximum Operating Temperature: + 100 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-115
• Minimum Operating Temperature: - 20 C
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGD714,112

NXP Semiconductors
Notes
1. Slope straight line is defined as gain at 750 MHz  gain at 45 MHz.
2. Tilt = 7.3 dB (55 to 547 MHz).
3. f
4. Measured according to DIN45004B:
5. The module normally operates at V
2001 Nov 02
CSO
d
V
NF
I
SYMBOL
tot
2
o
750 MHz, 20.3 dB gain power doubler
amplifier
f
measured at f
f
f
f
measured at f
p
q
p
q
r
= 749.25 MHz; V
= 55.25 MHz; V
= 691.25 MHz; V
= 740.25 MHz; V
= 747.25 MHz; V
composite second
order distortion
second order distortion
output voltage
noise figure
total current
consumption (DC)
PARAMETER
p
p
+ f
+ f
p
q
q
r
q
p
q
= 44 dBmV;
= 746.5 MHz.
 f
= V
= 44 dBmV;
= V
= V
r
= 738.25 MHz.
o
o
o
6 dB;
;
6 dB;
112 channels flat; V
f
79 channels flat; V
f
79 channels; f
V
note 3
d
f = 50 MHz
f = 550 MHz
f = 750 MHz
note 5
m
m
B
im
o
= 746.5 MHz
= 548.5 MHz
= 24 V, but is able to withstand supply transients up to 30 V.
= 49.3 dBmV at 547 MHz; note 2
= 60 dB; note 4
m
CONDITIONS
= 746.5 MHz;
o
o
= 44 dBmV;
4
= 44 dBmV;




64



380
MIN.








395
TYP.
Product specification
62
67
60
74

5.5
5.5
7
410
BGD714
MAX.
dB
dB
dB
dB
dBmV
dB
dB
dB
mA
UNIT