BGD714 NXP Semiconductors, BGD714 Datasheet - Page 2
BGD714
Manufacturer Part Number
BGD714
Description
RF Amp Module Single GP Amp 750MHz 30V 7-Pin SOT-115J Bulk
Manufacturer
NXP Semiconductors
Type
General Purpose Amplifierr
Datasheet
1.BGD714112.pdf
(9 pages)
Specifications of BGD714
Package
7SOT-115J
Typical Power Gain
21.3@750MHz dB
Maximum Output Return Loss
17(Min)@790MHz dB
Maximum Supply Voltage
30 V
Operating Frequency
750 MHz
Noise Figure
7 dB at 750 MHz
Supply Current
410 mA
Maximum Operating Temperature
+ 100 C
Mounting Style
SMD/SMT
Package / Case
SOT-115
Minimum Operating Temperature
- 20 C
Number Of Channels
1 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGD714,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BGD714
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
NXP Semiconductors
FEATURES
Excellent linearity
Extremely low noise
Excellent return loss properties
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40 to 750 MHz
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2001 Nov 02
G
I
V
V
T
T
tot
frequency range.
SYMBOL
SYMBOL
stg
mb
B
i
750 MHz, 20.3 dB gain power doubler
amplifier
p
power gain
total current consumption (DC)
supply voltage
RF input voltage
storage temperature
operating mounting base temperature
PARAMETER
PARAMETER
f = 45 MHz
f = 750 MHz
V
B
= 24 V
2
PINNING - SOT115J
handbook, halfpage
CONDITIONS
PIN
2, 3
7, 8
1
5
9
Side view
Fig.1 Simplified outline.
1
2
input
common
+V
output
common
20
20.8
380
40
20
3
B
MIN.
MIN.
5
7
8
DESCRIPTION
9
Product specification
20.6
21.8
410
30
70
+100
+100
MSA319
MAX.
MAX.
BGD714
dB
dB
mA
V
dBmV
C
C
UNIT
UNIT