NSBC143ZPDXV6T5 ON Semiconductor, NSBC143ZPDXV6T5 Datasheet - Page 11

TRANS BR NPN/PNP DUAL 50V SOT563

NSBC143ZPDXV6T5

Manufacturer Part Number
NSBC143ZPDXV6T5
Description
TRANS BR NPN/PNP DUAL 50V SOT563
Manufacturer
ON Semiconductor
Datasheet

Specifications of NSBC143ZPDXV6T5

Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Frequency - Transition
-
Other names
NSBC143ZPDXV6T5OS
0.001
3.5
2.5
1.5
0.5
0.01
4
3
2
1
0
0.1
0
1
0
2
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 NPN TRANSISTOR
I
C
/I
B
4
= 10
Figure 34. Output Capacitance
V
6
R
Figure 32. V
, REVERSE BIAS VOLTAGE (VOLTS)
20
I
C
8
, COLLECTOR CURRENT (mA)
10
15 20
CE(sat)
40
0.1
NSBC114EPDXV6T1, NSBC114EPDXV6T5
10
1
0
Figure 36. Input Voltage versus Output Current
25 30
versus I
V
O
= 0.2 V
T
A
f = 1 MHz
l
T
E
35 40
A
= −25 C
10
60
= 0 V
= 25 C
C
75 C
I
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
25 C
45 50
20
80
11
T
A
= −25 C
100
30
300
250
200
150
100
10
50
1
0
1
0
Figure 35. Output Current versus Input Voltage
V
CE
T
2
A
= 10
= 75 C
40
4
25 C
2
6
Figure 33. DC Current Gain
75 C
I
C
8
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
50
10
4
15 20 40 50 60 70 80 90
−25 C
6
−25 C
25 C
T
A
V
= 75 C
O
25 C
8
= 5 V
100
10

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