NSBC143ZPDXV6T5 ON Semiconductor, NSBC143ZPDXV6T5 Datasheet - Page 10

• Manufacturer Part Number: NSBC143ZPDXV6T5
• Description: TRANS BR NPN/PNP DUAL 50V SOT563
• Manufacturer: ON Semiconductor

Specifications of NSBC143ZPDXV6T5

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: NSBC143ZPDXV6T5OS

0.01
0.1
0.8
0.6
0.2
0.4
1
1
0
0
0
I
C
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 PNP TRANSISTOR
/I
B
= 10
Figure 29. Output Capacitance
10
Figure 27. V
V
R
10
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
20
CE(sat)
20
100
T
0.1
NSBC114EPDXV6T1, NSBC114EPDXV6T5
10
A
1
= −25 C
0
Figure 31. Input Voltage versus Output Current
30
versus I
75 C
30
10
C
25 C
T
f = 1 MHz
l
T
40
A
E
A
= −25 C
= 0 V
I
= 25 C
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
20
40
50
10
75 C
25 C
0.001
1000
30
0.01
100
100
0.1
10
10
1
0
Figure 30. Output Current versus Input Voltage
1
1
V
40
O
= 0.2 V
2
Figure 28. DC Current Gain
I
C
3
V
, COLLECTOR CURRENT (mA)
in
50
, INPUT VOLTAGE (VOLTS)
V
4
O
= 5 V
5
10
T
6
A
= 75 C
T
A
7
= 75 C
−25 C
8
25 C
25 C
9
−25 C
100
10