PUML1,115 NXP Semiconductors, PUML1,115 Datasheet - Page 6

• Manufacturer Part Number: PUML1,115
• Description: TRANS ARRAY NPN W/RES SC-88
• Manufacturer: NXP Semiconductors

Specifications of PUML1,115

• Transistor Type: 1 NPN Pre-Biased, 1 NPN
• Current - Collector (ic) (max): 100mA, 200mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V / 210 @ 2mA, 10V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 1µA
• Frequency - Transition: 230MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062098115

NXP Semiconductors
PUML1_DG_1
Product data sheet
Fig 3.
Fig 5.
V
h
BEsat
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
500
400
300
200
100
1.3
0.9
0.5
0.1
0
10
10
V
TR1: DC current gain as a function of collector
current; typical values
I
TR1: Base-emitter saturation voltage as a
function of collector current; typical values
C
CE
amb
amb
amb
amb
amb
amb
1
1
/I
B
= 10 V
= 10
= 150 C
= 25 C
= 55 C
= 55 C
= 25 C
= 150 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
10
10
2
2
I
I
006aab256
006aab257
C
C
(mA)
(mA)
50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET
10
10
Rev. 01 — 14 July 2008
3
3
Fig 4.
Fig 6.
V
CEsat
(A)
(V)
I
10
10
(1) T
(2) T
(3) T
C
0.08
0.06
0.04
0.02
0.1
0
1
1
2
10
0
T
TR1: Collector current as a function of
collector-emitter voltage; typical values
I
TR1: Collector-emitter saturation voltage as a
function of collector current; typical values
C
amb
amb
amb
amb
1
/I
B
= 10
= 25 C
= 150 C
= 25 C
= 55 C
2
1
I
B
(1)
(2)
(3)
(mA) = 0.56
4
10
6
PUML1/DG
10
© NXP B.V. 2008. All rights reserved.
2
8
I
006aaa993
006aab258
C
V
CE
(mA)
0.50
0.44
0.38
0.32
0.26
0.20
0.14
0.08
0.02
(V)
10
10
3
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