PUMB14,115 NXP Semiconductors, PUMB14,115 Datasheet - Page 8

TRANS PREBIASED PNP SOT666

PUMB14,115

Manufacturer Part Number
PUMB14,115
Description
TRANS PREBIASED PNP SOT666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMB14,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (max)
1µA
Power - Max
300mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
PNP
Typical Input Resistor
47 KOhm
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Resistor - Emitter Base (r2) (ohms)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934058908115
PUMB14 T/R
PUMB14 T/R
NXP Semiconductors
10. Revision history
Table 10.
PEMB14_PUMB14_2
Product data sheet
Document ID
PEMB14_PUMB14_2
Modifications:
PEMB14_PUMB14_1
Revision history
Release date
20090831
20050217
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 3 “Package outline SOT363
Figure 4 “Package outline
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 31 August 2009
PNP/PNP resistor-equipped transistors; R1 = 47 k , R2 = open
SOT666”: updated
(SC-88)”: updated
Change notice
-
-
PEMB14; PUMB14
Supersedes
PEMB14_PUMB14_1
-
© NXP B.V. 2009. All rights reserved.
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