PUMD14,115 NXP Semiconductors, PUMD14,115 Datasheet - Page 7

• Manufacturer Part Number: PUMD14,115
• Description: TRANS PREBIASED DUAL SOT666
• Manufacturer: NXP Semiconductors

Specifications of PUMD14,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 47 KOhm
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058905115; PUMD14 T/R; PUMD14 T/R

NXP Semiconductors
Fig 6.
PEMD14_PUMD14_2
Product data sheet
Plastic surface-mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
Package outline SOT666
OUTLINE
VERSION
SOT666
0.6
0.5
A
S
0.27
0.17
b
p
pin 1 index
0.18
0.08
c
IEC
Y S
6
1
e 1
1.7
1.5
D
D
e
1.3
1.1
b p
E
5
2
JEDEC
0
1.0
e
3
REFERENCES
4
Rev. 02 — 2 September 2009
NPN/PNP resistor-equipped transistors; R1 = 47 k , R2 = open
0.5
e
1
w
A
M
1.7
1.5
A
H
E
JEITA
scale
1
0.3
0.1
L
p
0.1
w
A
0.1
y
2 mm
PEMD14; PUMD14
H E
E
detail X
PROJECTION
EUROPEAN
L p
c
© NXP B.V. 2009. All rights reserved.
X
ISSUE DATE
04-11-08
06-03-16
SOT666
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