ISPLSI 5256VE-80LT100I LATTICE SEMICONDUCTOR, ISPLSI 5256VE-80LT100I Datasheet - Page 11
![no-image](/images/manufacturer_photos/0/3/381/lattice_semiconductor_sml.jpg)
ISPLSI 5256VE-80LT100I
Manufacturer Part Number
ISPLSI 5256VE-80LT100I
Description
CPLD ispLSI® 5000VE Family 12K Gates 256 Macro Cells 80MHz EECMOS Technology 3.3V 100-Pin TQFP
Manufacturer
LATTICE SEMICONDUCTOR
Datasheet
1.ISPLSI_5256VE-80LT100I.pdf
(24 pages)
Specifications of ISPLSI 5256VE-80LT100I
Package
100TQFP
Family Name
ispLSI® 5000VE
Device System Gates
12000
Number Of Macro Cells
256
Maximum Propagation Delay Time
15 ns
Number Of User I/os
72
Number Of Logic Blocks/elements
8
Typical Operating Supply Voltage
3.3 V
Maximum Operating Frequency
80 MHz
Number Of Product Terms Per Macro
35
Operating Temperature
-40 to 85 °C
1. I/O voltage configuration must be set to VCC.
3-state levels are measured 0.5V from
steady-state active level.
Output Load Conditions (See Figure 9)
V
V
V
V
V
SYMBOL
Switching Test Conditions
A
B
C
D
DC Electrical Characteristics for 3.3V Range
Input Pulse Levels
Input Rise and Fall Time
Input Timing Reference Levels
Ouput Timing Reference Levels
Output Load
TEST CONDITION
CCIO
IL
IH
OL
OH
Active High
Active Low
Active High to Z
at V -0.5V
Active Low to Z
at V +0.5V
Slow Slew
OH
OL
I/O Reference Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
316Ω
316Ω
316Ω
R1
PARAMETER
∞
∞
∞
3.3V
348Ω
348Ω
348Ω
R2
∞
∞
∞
Over Recommended Operating Conditions
≤ 1.5ns 10% to 90%
511Ω
511Ω
511Ω
GND to V
R1
∞
∞
∞
See Figure 9
2.5V
1.5V
1.5V
Table 2-0004A/5KVE
475Ω
475Ω
475Ω
R2
Table 2-0003/5KVE
∞
∞
∞
CCIO min
35pF
35pF
35pF
35pF
5pF
5pF
CL
V
V
CCIO = min
CCIO = min
11
1
Figure 9. Test Load
*
Device
Output
Specifications ispLSI 5256VE
C L includes Test Fixture and Probe Capacitance.
, I
, I
CONDITION
OL
OH
= 8 mA
= -4 mA
V
CCIO
MIN.
-0.3
R 1
R 2
3.0
2.0
2.4
–
TYP.
–
–
–
–
–
C L
*
MAX. UNITS
5.25
3.6
0.8
0.4
–
Table 2-0007/5KVE
Point
Test
0213D
V
V
V
V
V