M29W160EB7AN6E NUMONYX, M29W160EB7AN6E Datasheet - Page 22

• Manufacturer Part Number: M29W160EB7AN6E
• Description: Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 70ns 48-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W160EB7AN6E

• Package: 48TSOP
• Cell Type: NOR
• Density: 16 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 2|16KByte x 1|32KByte x 1|64KByte x 31
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

M29W160ET, M29W160EB
Table 10. Device Capacitance
Note: Sampled only, not 100% tested.
Table 11. DC Characteristics
Note: 1. Sampled only, not 100% tested.
22/42
Symbol
I
CC3
V
I
I
V
Symbol
V
V
V
I
CC1
CC2
V
I
I
LKO
LO
OH
ID
C
LI
OL
IH
ID
IL
C
OUT
(1)
IN
Input Leakage Current
Output Leakage Current
Supply Current (Read)
Supply Current (Standby)
Supply Current
(Program/Erase)
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Identification Voltage
Identification Current
Program/Erase Lockout
Supply Voltage
Input Capacitance
Output Capacitance
Parameter
Parameter
0V
E = V
RP = V
Controller active
Test Condition
0V
E = V
Program/Erase
I
OH
I
OL
f = 6MHz
A9 = V
V
= –100
Test Condition
IL
= 1.8mA
V
CC
OUT
, G = V
CC
IN
V
V
OUT
±0.2V,
IN
±0.2V
ID
V
μ
= 0V
V
CC
A
= 0V
IH
CC
,
V
0.7V
CC
–0.5
11.5
Min
1.8
–0.4
CC
Min
Typ
4.5
35
Max
12
6
V
CC
Max
0.45
12.5
100
100
0.8
2.3
±1
±1
10
20
+0.3
Unit
pF
pF
Unit
mA
mA
μ
μ
μ
μ
V
V
V
V
V
V
A
A
A
A