M25PX64-VME6G NUMONYX, M25PX64-VME6G Datasheet - Page 54

• Manufacturer Part Number: M25PX64-VME6G
• Description: NEW 64MB T9HX SECTOR ERASE
• Manufacturer: NUMONYX

Specifications of M25PX64-VME6G

• Cell Type: NOR
• Density: 64Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 24b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VDFPN
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 8M
• Supply Current: 12mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / Rohs Status: Compliant

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Figure 29. Power-up timing
Table 11.
1. These parameters are characterized only.
Initial delivery state
The device is delivered with the memory array erased: all bits are set to ‘1’ (each byte
contains FFh). The status register contains 00h (all status register bits are 0).
Symbol
t
V CC (max)
t
V CC (min)
PUW
V
VSL
WI
(1)
(1)
(1)
V WI
V CC
V
Time delay to write instruction
Write inhibit voltage
Power-up timing and V
CC
Reset state
device
(min) to S Low
of the
Program, erase and write commands are rejected by the device
Chip selection not allowed
Parameter
WI
threshold
tPUW
tVSL
Read access allowed
Min
1.5
30
1
Device fully
accessible
Max
2.5
10
AI04009C
time
Unit
ms
μs
V