M25PX64-VME6G NUMONYX, M25PX64-VME6G Datasheet - Page 29

• Manufacturer Part Number: M25PX64-VME6G
• Description: NEW 64MB T9HX SECTOR ERASE
• Manufacturer: NUMONYX

Specifications of M25PX64-VME6G

• Cell Type: NOR
• Density: 64Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 24b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VDFPN
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 8M
• Supply Current: 12mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / Rohs Status: Compliant

6.2
Write disable (WRDI)
The write disable (WRDI) instruction
The write disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
The write enable latch (WEL) bit is reset under the following conditions:
Figure 10. Write disable (WRDI) instruction sequence
Power-up
Write disable (WRDI) instruction completion
Write status register (WRSR) instruction completion
Write to lock register (WRLR) instruction completion
Page program (PP) instruction completion
Dual input fast program (DIFP) instruction completion
Program OTP (POTP) instruction completion
Subsector erase (SSE) instruction completion
Sector erase (SE) instruction completion
Bulk erase (BE) instruction completion
S
C
DQ0
DQ1
(Figure
High Impedance
0
1
2
Instruction
10) resets the write enable latch (WEL) bit.
3
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7
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