MT48LC2M32B2P-7:G Micron Technology Inc, MT48LC2M32B2P-7:G Datasheet - Page 66

• Manufacturer Part Number: MT48LC2M32B2P-7:G
• Description: DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II Tray
• Manufacturer: Micron Technology Inc
• Type: SDRAMr
• Series: -r

Specifications of MT48LC2M32B2P-7:G

• Density: 64 Mb
• Maximum Clock Rate: 143 MHz
• Package: 86TSOP-II
• Address Bus Width: 13 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 17|8|5.5 ns
• Operating Temperature: 0 to 70 °C
• Organization: 2Mx32
• Address Bus: 13b
• Access Time (max): 17/8/5.5ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 160mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (2Mx32)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Lead Free Status / Rohs Status: Compliant

Figure 48:
PDF: 09005aef811ce1fe/Source: 09005aef811ce1d5
64MSDRAMx32_2.fm - Rev. J 12/08 EN
COMMAND
BA0, BA1
DQM 0-3
A0-A9
CLK
CKE
A10
DQ
WRITE – Full-Page Burst
t CKS
t CMS
t AS
t AS
t AS
Notes:
ACTIVE
BANK
T0
ROW
ROW
t CKH
t CMH
t AH
t AH
t AH
t RCD
1. A8 and A9 = “Don’t Care.”
2.
3. Page left open; no
t CL
t
T1
WR must be satisfied prior to PRECHARGE command.
NOP
t CH
t CMS
t CK
t DS
COLUMN m 1
BANK
T2
WRITE
D
IN
t CMH
t DH
m
t
RP.
t DS
D
IN
T3
NOP
m + 1
t DH
66
t DS
D
IN
T4
NOP
256 locations within same row
m + 2
t DH
Full page completed
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t DS
D
IN
T5
NOP
m + 3
t DH
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t DS
Tn + 1
D
IN
NOP
m - 1
t DH
Full-page burst does
not self-terminate. Can
use BURST TERMINATE
command to stop.
©2001 Micron Technology, Inc. All rights reserved.
64Mb: x32 SDRAM
BURST TERM
Timing Diagrams
Tn + 2
DON’T CARE
UNDEFINED
2, 3
Tn + 3
NOP