HN1B01FDW1T1G ON Semiconductor, HN1B01FDW1T1G Datasheet - Page 5

• Manufacturer Part Number: HN1B01FDW1T1G
• Description: TRANS BR NPN/PNP DUAL 60V SC74-6
• Manufacturer: ON Semiconductor

Specifications of HN1B01FDW1T1G

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 2µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 6V
• Power - Max: 380mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: HN1B01FDW1T1GOS

0.05 (0.002)
S
G
H
6
L
1
A
5
2
*For additional information on our Pb−Free strategy and soldering
3
4
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.028
0.7
D
C
B
0.074
1.9
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
HN1B01FDW1T1
K
http://onsemi.com
0.039
1.0
CASE 318F−05
ISSUE K
SC−74
J
0.094
5
2.4
M
SCALE 10:1
inches
0.037
0.037
mm
0.95
0.95
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
4. 318F−01, −02, −03 OBSOLETE. NEW
PER ANSI Y14.5M, 1982.
LEAD FINISH THICKNESS. MINIMUM
LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
STANDARD 318F−04.
STYLE 3:
DIM
PIN 1. EMITTER 1
M
A
B
C
D
G
H
K
L
S
J
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
0.1142
0.0512
0.0354
0.0098
0.0335
0.0005
0.0040
0.0079
0.0493
0.0985
MIN
0
INCHES
_
0.1220
0.0669
0.0433
0.0197
0.0413
0.0040
0.0102
0.0236
0.0649
0.1181
MAX
10
_
0.013
MILLIMETERS
MIN
2.90
1.30
0.90
0.25
0.85
0.10
0.20
1.25
2.50
0
_
MAX
0.100
3.10
1.70
1.10
0.50
1.05
0.26
0.60
1.65
3.00
10
_