HN1B01FDW1T1G ON Semiconductor, HN1B01FDW1T1G Datasheet

TRANS BR NPN/PNP DUAL 60V SC74-6

HN1B01FDW1T1G

Manufacturer Part Number
HN1B01FDW1T1G
Description
TRANS BR NPN/PNP DUAL 60V SC74-6
Manufacturer
ON Semiconductor
Datasheet

Specifications of HN1B01FDW1T1G

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (max)
2µA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 6V
Power - Max
380mW
Mounting Type
Surface Mount
Package / Case
SC-74-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
HN1B01FDW1T1GOS

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HN1B01FDW1T1
Complementary Dual
General Purpose
Amplifier Transistor
PNP and NPN Surface Mount
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MAXIMUM RATINGS
March, 2005 − Rev. 2
THERMAL CHARACTERISTICS
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Power Dissipation
Junction Temperature
Storage Temperature
High Voltage and High Current: V
High h
Moisture Sensitivity Level: 1
ESD Rating
Pb−Free Package is Available
Semiconductor Components Industries, LLC, 2005
FE
Characteristic
: h
Rating
FE
= 200X400
− Human Body Model: 3A
− Machine Model: C
(T
A
= 25 C)
V
V
V
Symbol
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
CEO
T
P
T
I
stg
C
D
J
= 50 V, I
−55 to +150
C
Value
Max
200
380
150
7.0
60
50
= 200 mA
mAdc
Unit
Unit
Vdc
Vdc
Vdc
mW
C
C
†For information on tape and reel specifications,
HN1B01FDW1T1
HN1B01FDW1T1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
Q
6
ORDERING INFORMATION
(1)
(6)
1
5
4
MARKING DIAGRAM
1 2
http://onsemi.com
R9 = Device Code
M
3
= Date Code
(Pb−Free)
Package
R9 M
SC−74
SC−74
(2)
Publication Order Number:
(5)
CASE 318F
STYLE 3
HN1B01FDW1T1/D
SC−74
3000/Tape & Reel
3000/Tape & Reel
Shipping
(4)
(3)
Q
2

Related parts for HN1B01FDW1T1G

HN1B01FDW1T1G Summary of contents

Page 1

... Date Code ORDERING INFORMATION Device Package Shipping HN1B01FDW1T1 SC−74 3000/Tape & Reel HN1B01FDW1T1G SC−74 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: ...

Page 2

Q1: PNP ELECTRICAL CHARACTERISTICS Characteristic Collector−Emitter Breakdown Voltage (I = 2.0 mAdc Collector−Base Breakdown Voltage = 10 mAdc Emitter−Base Breakdown Voltage = 10 mAdc ...

Page 3

Typical Electrical Characteristics: PNP Transistor −200 −1.5 mA −2.0 mA −160 −120 −80 − −1 −2 − COLLECTOR−EMITTER VOLTAGE (V) CE Figure 1. Collector Saturation Region 1000 T = 100 −25 C ...

Page 4

Typical Electrical Characteristics: NPN Transistor 280 6.0 mA 3.0 mA 5.0 mA 240 200 160 120 COLLECTOR−EMITTER VOLTAGE (V) CE Figure 7. Collector Saturation Voltage 1000 ...

Page 5

... 0.05 (0.002) H 1.9 0.074 0.7 0.028 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. HN1B01FDW1T1 PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 0.95 ...

Page 6

... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com HN1B01FDW1T1 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi ...

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