HN1B01FDW1T1G ON Semiconductor, HN1B01FDW1T1G Datasheet - Page 2
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HN1B01FDW1T1G
Manufacturer Part Number
HN1B01FDW1T1G
Description
TRANS BR NPN/PNP DUAL 60V SC74-6
Manufacturer
ON Semiconductor
Datasheet
1.HN1B01FDW1T1G.pdf
(6 pages)
Specifications of HN1B01FDW1T1G
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (max)
2µA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 6V
Power - Max
380mW
Mounting Type
Surface Mount
Package / Case
SC-74-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
HN1B01FDW1T1GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HN1B01FDW1T1G
Manufacturer:
ON Semiconductor
Quantity:
6
Company:
Part Number:
HN1B01FDW1T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
HN1B01FDW1T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Q1: PNP
Q2: NPN
1. Pulse Test: Pulse Width
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector−Base Cutoff Current
Collector−Emitter Cutoff Current
DC Current Gain (Note 1)
Collector−Emitter Saturation Voltage
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector−Base Cutoff Current
Collector−Emitter Cutoff Current
DC Current Gain (Note 1)
Collector−Emitter Saturation Voltage
(I
(I
(I
(V
(V
(V
(V
(V
(I
(I
(I
(I
(V
(V
(V
(V
(V
(I
C
C
E
C
C
C
E
C
CB
CE
CE
CE
CE
CB
CE
CE
CE
CE
= 10 mAdc, I
= 10 mAdc, I
= 2.0 mAdc, I
= 10 mAdc, I
= 100 mAdc, I
= 2.0 mAdc, I
= 10 mAdc, I
= 100 mAdc, I
= 45 Vdc, I
= 10 Vdc, I
= 30 Vdc, I
= 30 Vdc, I
= 6.0 Vdc, I
= 45 Vdc, I
= 10 Vdc, I
= 30 Vdc, I
= 30 Vdc, I
= 6.0 Vdc, I
C
C
E
E
E
B
B
B
E
B
B
B
B
B
C
C
= 0)
= 0)
B
= 0)
= 0)
B
= 0)
= 0)
= 0)
= 0, T
= 0)
= 0)
= 0)
= 0, T
= 0)
= 0)
= 2.0 mAdc)
= 2.0 mAdc)
= 10 mAdc)
= 10 mAdc)
A
A
Characteristic
Characteristic
300 ms, D.C.
= 80 C)
= 80 C)
(T
(T
2%.
A
A
= 25 C unless otherwise noted)
= 25 C unless otherwise noted)
HN1B01FDW1T1
http://onsemi.com
2
V
V
V
V
V
V
Symbol
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)CEO
(BR)CBO
(BR)EBO
(BR)EBO
I
I
CE(sat)
I
I
CE(sat)
h
h
CBO
CEO
CBO
CEO
FE
FE
−0.15
−200
−7.0
0.15
Min
−50
−60
Min
200
7.0
50
60
−
−
−
−
−
−
−
−
−400
Max
−0.1
−0.1
−2.0
−1.0
−0.3
Max
0.25
400
0.1
0.1
2.0
1.0
−
−
−
−
−
−
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
−
−