SMBT 3906S E6327 Infineon Technologies, SMBT 3906S E6327 Datasheet - Page 9

• Manufacturer Part Number: SMBT 3906S E6327
• Description: TRANSISTOR ARRAY PNP SW SOT-363
• Manufacturer: Infineon Technologies

Specifications of SMBT 3906S E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60 at 10 uA at 1 V
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 330 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SMBT3906SE6327XT; SP000016694

Storage time t
Rise time t
t
t
s
r
10
10
10
10
10
10
10
10
ns
ns
3
2
1
0
3
2
1
0
10
10
125 C
0
0
r
= ƒ(I
25 C
5
5
stg
C
10
10
= ƒ(I
)
h
1
1
FE
125 C
= 20
25 C
C
10
)
5
5
10
10
h
V
2
h
2
FE
CC
FE
= 20
= 40 V
= 10
10
EHP00762
EHP00764
Ι
mA
Ι
mA
C
C
10
10
3
3
9
Fall time t
t
f
10
10
10
10
ns
0
3
2
1
10
0
f
=
SMBT3906...MMBT3906
ƒ
(I
5
C
)
10
h
1
FE
125 C
= 10
25 C
5
10
V
h
2
CC
FE
2008-02-29
Ι
= 20
mA
= 40 V
C
EHP00773
5
10
3