SMBT 3906S E6327 Infineon Technologies, SMBT 3906S E6327 Datasheet - Page 4

• Manufacturer Part Number: SMBT 3906S E6327
• Description: TRANSISTOR ARRAY PNP SW SOT-363
• Manufacturer: Infineon Technologies

Specifications of SMBT 3906S E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60 at 10 uA at 1 V
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 330 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SMBT3906SE6327XT; SP000016694

Electrical Characteristics at T
Parameter
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
Emitter-base capacitance
V
Delay time
V
V
Rise time
V
V
Storage time
V
Fall time
V
Noise figure
I
∆ f = 200 Hz, R
C
C
CB
EB
CC
BE(off)
CC
BE(off)
CC
CC
= 10 mA, V
= 100 µA, V
= 0.5 V, f = 1 MHz
= 5 V, f = 1 MHz
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 0.5 V
= 0.5 V
C
C
C
C
CE
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 10 mA, I
CE
S
= 20 V, f = 100 MHz
= 1 kΩ
= 5 V, f = 1 kHz,
B1
B1
B1
B1
= 1 mA,
= 1 mA,
= I
= I
B2
B2
A
= 1 mA
= 1 mA
= 25°C, unless otherwise specified
4
Symbol
f
C
C
t
t
t
t
F
T
d
r
stg
f
cb
eb
SMBT3906...MMBT3906
min.
250
-
-
-
-
-
-
-
Values
typ.
-
-
-
-
-
-
-
-
max.
225
3.5
10
35
35
75
4
2008-02-29
-
Unit
MHz
pF
ns
dB