PBSS2515VS,315 NXP Semiconductors, PBSS2515VS,315 Datasheet - Page 2

• Manufacturer Part Number: PBSS2515VS,315
• Description: TRANS NPN 15V 1A LO-SAT SOT-666
• Manufacturer: NXP Semiconductors

Specifications of PBSS2515VS,315

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 100mA, 2V
• Power - Max: 200mW
• Frequency - Transition: 420MHz
• Mounting Type: Surface Mount
• Package / Case: SS Mini-6 (SOT-666)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934056768315

NXP Semiconductors
FEATURES
• 300 mW total power dissipation
• Very small 1.6 × 1.2 mm ultra thin package
• Excellent coplanarity due to straight leads
• Low collector-emitter saturation voltage
• High current capability
• Improved thermal behaviour due to flat lead
• Replaces two SC-75/SC-89 packaged low V
• Reduces required PCB area
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and muting
• Low frequency driver circuits
• LCD backlighting
• Audio frequency general purpose amplifier applications
• Battery driven equipment (mobile phones, video
DESCRIPTION
NPN low V
package.
PNP complement: PBSS3515VS.
MARKING
ORDERING INFORMATION
2004 Dec 23
PBSS2515VS
PBSS2515VS
TYPE NUMBER
transistors on same PCB area
cameras and hand-held devices).
15 V low V
TYPE NUMBER
CEsat
double transistor in a SOT666 plastic
CE(sat)
NAME
−
NPN double transistor
MARKING CODE
plastic surface mounted package; 6 leads
N9
CEsat
2
QUICK REFERENCE DATA
PINNING
handbook, halfpage
DESCRIPTION
V
I
R
SYMBOL
CM
CEO
CEsat
PACKAGE
Fig.1
PIN
1, 4
2, 5
6, 3
Top view
Simplified outline (SOT666) and symbol.
6
1
collector-emitter voltage
peak collector current
equivalent on-resistance
emitter
base
collector
5
2
PARAMETER
3
4
TR1; TR2
TR1; TR2
TR1; TR2
DESCRIPTION
MAM447
PBSS2515VS
TR1
Product data sheet
6
1
15
1
<500
MAX.
5
2
VERSION
SOT666
4
3
TR2
V
A
mΩ
UNIT