PBSS2515VS,315 NXP Semiconductors, PBSS2515VS,315 Datasheet

TRANS NPN 15V 1A LO-SAT SOT-666

PBSS2515VS,315

Manufacturer Part Number
PBSS2515VS,315
Description
TRANS NPN 15V 1A LO-SAT SOT-666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS2515VS,315

Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
15V
Vce Saturation (max) @ Ib, Ic
250mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 100mA, 2V
Power - Max
200mW
Frequency - Transition
420MHz
Mounting Type
Surface Mount
Package / Case
SS Mini-6 (SOT-666)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
934056768315
Product data sheet
Supersedes data of 2001 Nov 07
DATA SHEET
PBSS2515VS
15 V low V
transistor
DISCRETE SEMICONDUCTORS
CE(sat)
M3D744
NPN double
2004 Dec 23

Related parts for PBSS2515VS,315

PBSS2515VS,315 Summary of contents

Page 1

DATA SHEET PBSS2515VS 15 V low V transistor Product data sheet Supersedes data of 2001 Nov 07 DISCRETE SEMICONDUCTORS M3D744 NPN double CE(sat) 2004 Dec 23 ...

Page 2

... NXP Semiconductors 15 V low V NPN double transistor CE(sat) FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High current capability • Improved thermal behaviour due to flat lead • ...

Page 3

... NXP Semiconductors 15 V low V NPN double transistor CE(sat) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per transistor unless otherwise specified V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current ...

Page 4

... NXP Semiconductors 15 V low V NPN double transistor CE(sat) CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER Per transistor unless otherwise specified I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage R equivalent on-resistance CEsat V base-emitter saturation voltage ...

Page 5

... NXP Semiconductors 15 V low V NPN double transistor CE(sat) 600 handbook, halfpage ( 400 (2) 200 (3) 0 − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values handbook, halfpage V CEsat (mV (1) (2) 10 (3) 1 −1 ...

Page 6

... NXP Semiconductors 15 V low V NPN double transistor CE(sat handbook, halfpage R CEsat (Ω) 10 (1) (2) (3) 1 −1 10 − 20 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.6 Equivalent on-resistance as a function of collector current; typical values. 2004 Dec 23 MLD648 1200 handbook, halfpage ...

Page 7

... NXP Semiconductors 15 V low V NPN double transistor CE(sat) PACKAGE OUTLINE Plastic surface-mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2004 Dec scale 1.3 1.7 0.3 1.0 ...

Page 8

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 9

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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