BCM856BS,115 NXP Semiconductors, BCM856BS,115 Datasheet - Page 3

• Manufacturer Part Number: BCM856BS,115
• Description: TRANS PNP DBL 65V 100MA SOT-363
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BCM856BS,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 175MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 290
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: PNP/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 65 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934062056115

NXP Semiconductors
4. Marking
5. Limiting values
BCM856BS_BCM856DS_1
Product data sheet
Table 5.
[1]
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Type number
BCM856BS
BCM856BS/DG
BCM856DS
BCM856DS/DG
Symbol
Per transistor
V
V
V
I
I
P
Per device
P
T
T
T
C
CM
j
amb
stg
CBO
CEO
EBO
tot
tot
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Marking codes
Limiting values
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
Rev. 01 — 7 August 2008
BCM856BS; BCM856DS
Marking code
*BS
PB*
DS
R9
Conditions
open emitter
open base
open collector
single pulse;
t
T
T
p
amb
amb
PNP/PNP matched double transistors
1 ms
25 C
25 C
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
55
65
© NXP B.V. 2008. All rights reserved.
Max
200
250
300
380
150
+150
+150
80
65
5
100
200
Unit
V
V
V
mA
mA
mW
mW
mW
mW
C
C
C
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