BCM856BS,115 NXP Semiconductors, BCM856BS,115 Datasheet

TRANS PNP DBL 65V 100MA SOT-363

BCM856BS,115

Manufacturer Part Number
BCM856BS,115
Description
TRANS PNP DBL 65V 100MA SOT-363
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of BCM856BS,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
65V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
300mW
Frequency - Transition
175MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
290
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
PNP/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 65 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 100 mA
Maximum Dc Collector Current
- 200 mA
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934062056115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors are fully isolated internally.
Table 1.
I
I
I
I
I
I
Table 2.
Type number
BCM856BS
BCM856BS/DG
BCM856DS
BCM856DS/DG
Symbol
Per transistor
V
I
h
C
FE
CEO
BCM856BS; BCM856BS/DG
BCM856DS; BCM856DS/DG
PNP/PNP matched double transistors
Rev. 01 — 7 August 2008
Current gain matching
Base-emitter voltage matching
Drop-in replacement for standard double transistors
AEC-Q101 qualified
Current mirror
Differential amplifier
Product overview
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
Package
NXP
SOT363
SOT457
Conditions
open base
V
I
C
CE
= 2 mA
= 5 V;
JEITA
SC-88
SC-74
Min
-
-
200
Package configuration
very small
small
Typ
-
-
290
Product data sheet
Max
450
65
100
Unit
V
mA

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BCM856BS,115 Summary of contents

Page 1

BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG PNP/PNP matched double transistors Rev. 01 — 7 August 2008 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1. Type ...

Page 2

... NXP Semiconductors Table 2. Symbol Per device h /h FE1 FE2 V V BE1 [1] The smaller of the two values is taken as the numerator. [2] The smaller of the two values is subtracted from the larger value. 2. Pinning information Table 3. Pin Ordering information Table 4. Type number BCM856BS BCM856BS/DG BCM856DS ...

Page 3

... NXP Semiconductors 4. Marking Table 5. Type number BCM856BS BCM856BS/DG BCM856DS BCM856DS/DG [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per transistor V CBO V CEO V EBO tot Per device ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 7. Symbol Parameter Per transistor R th(j-a) Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table unless otherwise specified. amb Symbol Per transistor I CBO I EBO CEsat V BEsat BCM856BS_BCM856DS_1 Product data sheet BCM856BS ...

Page 5

... NXP Semiconductors Table unless otherwise specified. amb Symbol Per device h /h FE1 FE2 V V BE1 [1] V BEsat [ [3] The smaller of the two values is taken as the numerator. [4] The smaller of the two values is subtracted from the larger value. BCM856BS_BCM856DS_1 Product data sheet Characteristics … ...

Page 6

... NXP Semiconductors 0.20 I (mA (A) 0.16 0.12 0.08 0. amb Fig 1. Collector current as a function of collector-emitter voltage; typical values 1.3 V BEsat (V) 1.1 0.9 (1) (2) 0.7 (3) 0.5 0 amb ( amb ( 100 C amb Fig 3. Base-emitter saturation voltage as a function of collector current; typical values BCM856BS_BCM856DS_1 Product data sheet BCM856BS ...

Page 7

... NXP Semiconductors (V) 0.8 0.6 0 amb Fig 5. Base-emitter voltage as a function of collector current; typical values (pF MHz amb Fig 7. Collector capacitance as a function of collector-base voltage; typical values BCM856BS_BCM856DS_1 Product data sheet BCM856BS; BCM856DS 006aaa544 f (MHz (mA) C Fig 6. 006aaa546 C (pF (V) CB Fig 8. Rev. 01 — 7 August 2008 ...

Page 8

... NXP Semiconductors 8. Application information TR1 006aaa524 Fig 9. Current mirror 9. Test information 9.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is suitable for use in automotive applications. ...

Page 9

... NXP Semiconductors 11. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number BCM856BS BCM856BS/DG SOT363 BCM856DS BCM856DS/DG SOT457 [1] For further information and the availability of packing methods, see [2] T1: normal taping [3] T2: reverse taping 12. Soldering Fig 13. Refl ...

Page 10

... NXP Semiconductors 4.5 Fig 14. Wave soldering footprint SOT363 (SC-88) 3.3 Fig 15. Reflow soldering footprint SOT457 (SC-74) BCM856BS_BCM856DS_1 Product data sheet BCM856BS; BCM856DS 1.3 1.3 2.45 5.3 3.45 1.95 0.95 2.825 0. 2.4 Rev. 01 — 7 August 2008 PNP/PNP matched double transistors 1 ...

Page 11

... NXP Semiconductors 1.475 5.05 1.475 Fig 16. Wave soldering footprint SOT457 (SC-74) BCM856BS_BCM856DS_1 Product data sheet BCM856BS; BCM856DS PNP/PNP matched double transistors 5.3 1. 2.85 Rev. 01 — 7 August 2008 1 solder lands solder resist 0. occupied area Dimensions in mm preferred transport direction during soldering sot457_fw © ...

Page 12

... NXP Semiconductors 13. Revision history Table 10. Revision history Document ID Release date BCM856BS_BCM856DS_1 20080807 BCM856BS_BCM856DS_1 Product data sheet BCM856BS; BCM856DS PNP/PNP matched double transistors Data sheet status Change notice Product data sheet - Rev. 01 — 7 August 2008 Supersedes - © NXP B.V. 2008. All rights reserved. ...

Page 13

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 14

... NXP Semiconductors 16. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Application information Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 9.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 11 Packing information ...

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