BC817DS,115 NXP Semiconductors, BC817DS,115 Datasheet - Page 4

• Manufacturer Part Number: BC817DS,115
• Description: TRANSISTOR NPN 500MA 45V SOT457
• Manufacturer: NXP Semiconductors

Specifications of BC817DS,115

• Package / Case: SC-74-6
• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 600mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 500 mA
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 370 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057319115; BC817DS T/R; BC817DS T/R

NXP Semiconductors
2002 Nov 22
handbook, halfpage
handbook, halfpage
NPN general purpose double transistor
V CEsat
V
(1) T
(2) T
(3) T
Fig.2
I
(1) T
(2) T
(3) T
Fig.4
(mV)
C
CE
/I
h FE
B
500
400
300
200
100
10
10
= 1 V.
= 10.
10
amb
amb
amb
amb
amb
amb
0
10
10
3
2
−1
−1
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
DC current gain as a function of collector
current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
1
(1)
(2)
(3)
10
10
(1)
(2)
(3)
10
10
2
2
I C (mA)
I C (mA)
MBL747
MBL749
10
10
3
3
4
handbook, halfpage
handbook, halfpage
(1) I
(2) I
(3) I
(4) I
Fig.3
V
(1) T
(2) T
(3) T
Fig.5
(mA)
(mV)
V BE
CE
1000
I C
1200
1000
800
600
400
200
800
600
400
200
= 1 V.
B
B
B
B
amb
amb
amb
0
10
= 15 mA.
= 13.5 mA.
= 12 mA.
= 10.5 mA.
0
−1
= −55 °C.
= 25 °C.
= 150 °C.
Collector current as a function of
collector-emitter voltage; typical values.
Base-emitter voltage as a function of
collector current; typical values.
2
(1) (2) (3) (4) (5)
1
(5) I
(6) I
(7) I
(8) I
B
B
B
B
4
= 9 mA.
= 7.5 mA.
= 6 mA.
= 4.5 mA.
10
(1)
(2)
(3)
6
(9) I
(10) I
(10)
10
(6)
(7)
(8)
(9)
Product data sheet
2
BC817DS
8
I C (mA)
B
B
V CE (V)
= 3 mA.
= 1.5 mA.
MBL748
MBL750
10
10
3