bc817ds NXP Semiconductors, bc817ds Datasheet
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... DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage BC817DS NPN general purpose double transistor Product specification Supersedes data of 2002 Aug 09 M3D302 2002 Nov 22 ...
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... MARKING CODE N3 Fig.1 CONDITIONS open emitter open base open collector note 1 amb note 1 amb 2 Product specification BC817DS PARAMETER collector-emitter voltage collector current (DC) peak collector current DESCRIPTION emitter TR1; TR2 base TR1; TR2 collector TR1; TR2 ...
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... mA; note 500 mA notes 1 and MHz mA 100 MHz 3 Product specification BC817DS VALUE UNIT 208 K MIN. TYP. MAX. UNIT 100 100 nA 160 400 40 700 mV 1 ...
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... I C (mA (1) T amb (2) T amb (3) T amb Fig.5 4 Product specification BC817DS (1) (2) (3) (4) (5) (6) (7) (8) (9) (10 (V) ( mA 7.5 mA. (10 ( mA. ...
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... OUTLINE VERSION IEC SOT457 2002 Nov scale 3.1 1.7 3.0 0.6 0.95 2.7 1.3 2.5 0.2 REFERENCES JEDEC EIAJ SC-74 5 Product specification detail 0.33 0.2 0.2 0.1 0.23 EUROPEAN PROJECTION BC817DS SOT457 ISSUE DATE 97-02-28 01-05-04 ...
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... Product specification BC817DS DEFINITION These products are not Philips Semiconductors ...
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... Philips Semiconductors NPN general purpose double transistor 2002 Nov 22 NOTES 7 Product specification BC817DS ...
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Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited ...