BC847BS,115 NXP Semiconductors, BC847BS,115 Datasheet - Page 7

• Manufacturer Part Number: BC847BS,115
• Description: TRANS NPN GP 100MA 45V SOT363
• Manufacturer: NXP Semiconductors

Specifications of BC847BS,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1635-2; 934042520115; BC847BS T/R

NXP Semiconductors
BC847BS_3
Product data sheet
Fig 8.
V
(mV)
CEsat
(1) T
(2) T
(3) T
10
10
10
10
10
4
3
2
I
Per transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
C
amb
amb
amb
1
/I
B
= 20
= 150 C
= 25 C
= 55 C
1
(1)
(3)
(2)
10
10
2
I
C
(mA)
mgt729
Rev. 03 — 18 February 2009
10
3
Fig 9.
45 V, 100 mA NPN/NPN general-purpose transistor
(Hz)
f
T
10
10
10
9
8
7
10
V
Per transistor: Transition frequency as a
function of collector current; typical values
1
CE
= 5 V; f = 1 MHz; T
1
amb
= 25 C
10
BC847BS
I
© NXP B.V. 2009. All rights reserved.
C
(mA)
006aab424
10
2
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