BC847BS,115 NXP Semiconductors, BC847BS,115 Datasheet - Page 3

• Manufacturer Part Number: BC847BS,115
• Description: TRANS NPN GP 100MA 45V SOT363
• Manufacturer: NXP Semiconductors

Specifications of BC847BS,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1635-2; 934042520115; BC847BS T/R

NXP Semiconductors
5. Limiting values
BC847BS_3
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Symbol
Per transistor
V
V
V
I
I
I
P
Per device
P
T
T
T
C
CM
BM
Fig 1.
j
amb
stg
CBO
CEO
EBO
tot
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
(1) FR4 PCB, mounting pad for collector 1 cm
(2) FR4 PCB, standard footprint
Per device: Power derating curves SOT363 (SC-88)
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
(mW)
Rev. 03 — 18 February 2009
P
tot
500
400
300
200
100
0
75
25
(1)
(2)
45 V, 100 mA NPN/NPN general-purpose transistor
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
T
p
p
amb
amb
25
1 ms
1 ms
25 C
25 C
2
75
125
T
006aab419
amb
[1]
[2]
[1]
[2]
( C)
175
Min
-
-
-
-
-
-
-
-
-
-
-
65
65
BC847BS
© NXP B.V. 2009. All rights reserved.
Max
50
45
5
100
200
200
220
250
300
400
150
+150
+150
Unit
V
V
V
mA
mA
mA
mW
mW
mW
mW
2
C
C
C
.
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