BC846BS,115 NXP Semiconductors, BC846BS,115 Datasheet - Page 6

• Manufacturer Part Number: BC846BS,115
• Description: TRANS NPN/NPN 100MA 65V SOTSC88
• Manufacturer: NXP Semiconductors

Specifications of BC846BS,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Transistor Type: 2 NPN (Dual)
• Frequency - Transition: 100MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Collector/base Gain Hfe Min: 290
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: PNP/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 65 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 2
• Collector-emitter Voltage: 65V
• Collector-base Voltage: 80V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 200
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934063582115

NXP Semiconductors
BC856BS_1
Product data sheet
Fig 3.
Fig 5.
V
h
(V)
(1) T
(2) T
(3) T
FE
BE
600
400
200
0.8
0.6
0.4
0
1
10
10
V
Per transistor: DC current gain as a function of
collector current; typical values
V
Per transistor: Base-emitter voltage as a
function of collector current; typical values
CE
amb
amb
amb
CE
2
1
= 5 V
= 5 V; T
= 100 C
= 25 C
= 55 C
10
(1)
(2)
(3)
1
1
amb
= 25 C
1
10
10
10
2
10
I
006aaa541
006aaa544
C
2
I
C
(mA)
(mA)
Rev. 01 — 11 August 2009
10
10
3
3
Fig 4.
Fig 6.
65 V, 100 mA PNP/PNP general-purpose transistor
V
BEsat
(V)
(A)
I
(1) T
(2) T
(3) T
0.20
C
0.16
0.12
0.08
0.04
1.3
1.1
0.9
0.7
0.5
0.3
0.1
0
10
T
Per transistor: Collector current as a function
of collector-emitter voltage; typical values
I
Per transistor: Base-emitter saturation voltage
as a function of collector current; typical
values
0
C
amb
amb
amb
amb
/I
1
B
= 20
= 25 C
= 55 C
= 25 C
= 100 C
2
1
(1)
(2)
(3)
4
I
B
10
(mA) = 2.5
6
2.25
1.75
1.25
1.0
0.5
2.0
1.5
0.75
0.25
BC856BS
10
© NXP B.V. 2009. All rights reserved.
2
8
I
006aaa542
C
006aaa540
V
(mA)
CE
(V)
10
10
3
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