BC846BS,115 NXP Semiconductors, BC846BS,115 Datasheet

TRANS NPN/NPN 100MA 65V SOTSC88

BC846BS,115

Manufacturer Part Number
BC846BS,115
Description
TRANS NPN/NPN 100MA 65V SOTSC88
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BC846BS,115

Package / Case
SC-70-6, SC-88, SOT-363
Mounting Type
Surface Mount
Power - Max
300mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
65V
Transistor Type
2 NPN (Dual)
Frequency - Transition
100MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 100mA
Dc Collector/base Gain Hfe Min
290
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
PNP/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 65 V
Emitter- Base Voltage Vebo
- 6 V
Continuous Collector Current
- 100 mA
Maximum Dc Collector Current
- 200 mA
Power Dissipation
200 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
2
Collector-emitter Voltage
65V
Collector-base Voltage
80V
Emitter-base Voltage
6V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
200
Frequency (max)
100MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934063582115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD)
plastic package.
Table 1.
I
I
I
I
I
I
I
Table 2.
Type number
BC856BS
Symbol
Per transistor
V
I
h
C
FE
CEO
BC856BS
65 V, 100 mA PNP/PNP general-purpose transistor
Rev. 01 — 11 August 2009
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and board space
No mutual interference between the transistors
AEC-Q101 qualified
General-purpose switching and amplification
Parameter
collector-emitter voltage
collector current
DC current gain
Product overview
Quick reference data
Package
NXP
SOT363
Conditions
open base
V
I
C
CE
JEITA
SC-88
= 2 mA
= 5 V;
NPN/NPN
complement
BC846BS
Min
-
-
200
Typ
-
-
290
Product data sheet
NPN/PNP
complement
BC846BPN
Max
450
65
100
Unit
V
mA

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BC846BS,115 Summary of contents

Page 1

BC856BS 65 V, 100 mA PNP/PNP general-purpose transistor Rev. 01 — 11 August 2009 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Type number BC856BS 1.2 Features ...

Page 2

... NXP Semiconductors 2. Pinning information Table 3. Pin Ordering information Table 4. Type number BC856BS 4. Marking Table 5. Type number BC856BS [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BC856BS_1 Product data sheet 65 V, 100 mA PNP/PNP general-purpose transistor Pinning Description emitter TR1 base TR1 ...

Page 3

... NXP Semiconductors 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per transistor V CBO V CEO V EBO tot Per device P tot amb T stg [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Fig 1. ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 7. Symbol Per transistor R th(j-a) R th(j-sp) Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint th(j-a) 0.75 (K/W) 0.50 0. 0.20 0.10 0.05 0. FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; ...

Page 5

... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol Parameter Per transistor I CBO I EBO CEsat V BEsat BC856BS_1 Product data sheet 65 V, 100 mA PNP/PNP general-purpose transistor Characteristics Conditions collector-base cut-off current 150 C j emitter-base cut-off current DC current gain collector-emitter mA; C saturation voltage ...

Page 6

... NXP Semiconductors 600 h FE (1) 400 (2) 200 ( ( 100 C amb ( amb ( amb Fig 3. Per transistor: DC current gain as a function of collector current; typical values (V) 0.8 0.6 0 amb Fig 5. Per transistor: Base-emitter voltage as a function of collector current; typical values BC856BS_1 Product data sheet 65 V, 100 mA PNP/PNP general-purpose transistor ...

Page 7

... NXP Semiconductors 10 V CEsat ( (1) 10 ( 100 C amb ( amb ( amb Fig 7. Per transistor: Collector-emitter saturation voltage as a function of collector current; typical values (pF MHz amb Fig 9. Per transistor: Collector capacitance as a function of collector-base voltage; typical values BC856BS_1 Product data sheet 65 V, 100 mA PNP/PNP general-purpose transistor ...

Page 8

... NXP Semiconductors 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is suitable for use in automotive applications. 9. Package outline Fig 11. Package outline SOT363 (SC-88) 10 ...

Page 9

... NXP Semiconductors 11. Soldering Fig 12. Reflow soldering footprint SOT363 (SC-88) 4.5 Fig 13. Wave soldering footprint SOT363 (SC-88) BC856BS_1 Product data sheet 65 V, 100 mA PNP/PNP general-purpose transistor 2.65 1.5 2.35 0 1.8 1.3 1.3 2.45 5.3 Rev. 01 — 11 August 2009 BC856BS ...

Page 10

... NXP Semiconductors 12. Revision history Table 10. Revision history Document ID Release date BC856BS_1 20090811 BC856BS_1 Product data sheet 65 V, 100 mA PNP/PNP general-purpose transistor Data sheet status Change notice Product data sheet - Rev. 01 — 11 August 2009 BC856BS Supersedes - © NXP B.V. 2009. All rights reserved. ...

Page 11

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 12

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 Packing information Soldering ...

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