BC846BPN,115 NXP Semiconductors, BC846BPN,115 Datasheet
BC846BPN,115
Specifications of BC846BPN,115
Related parts for BC846BPN,115
BC846BPN,115 Summary of contents
Page 1
BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor Rev. 01 — 17 July 2009 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Type number BC846BPN 1.2 Features ...
Page 2
... NXP Semiconductors 2. Pinning information Table 3. Pin Ordering information Table 4. Type number BC846BPN 4. Marking Table 5. Type number BC846BPN [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BC846BPN_1 Product data sheet 65 V, 100 mA NPN/PNP general-purpose transistor Pinning Description emitter TR1 base TR1 ...
Page 3
... NXP Semiconductors 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per transistor; for the PNP transistor with negative polarity V CBO V CEO V EBO tot Per device P tot amb T stg [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint ...
Page 4
... NXP Semiconductors 6. Thermal characteristics Table 7. Symbol Per transistor R th(j-a) R th(j-sp) Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint th(j-a) 0.75 (K/W) 0.50 0. 0.20 0.10 0.05 0. FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; ...
Page 5
... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol Parameter TR1 (NPN) I CBO I EBO CEsat V BEsat TR2 (PNP) I CBO I EBO CEsat BC846BPN_1 Product data sheet 65 V, 100 mA NPN/PNP general-purpose transistor Characteristics Conditions collector-base cut-off current 150 C j emitter-base cut-off current ...
Page 6
... NXP Semiconductors Table unless otherwise specified. amb Symbol Parameter V BEsat 600 h FE 400 (1) (2) 200 ( ( 100 C amb ( amb ( amb Fig 3. TR1 (NPN): DC current gain as a function of collector current; typical values BC846BPN_1 Product data sheet 65 V, 100 mA NPN/PNP general-purpose transistor Characteristics … ...
Page 7
... NXP Semiconductors (V) 0.8 0.6 0 amb Fig 5. TR1 (NPN): Base-emitter voltage as a function of collector current; typical values 10 V CEsat ( (1) ( 100 C amb ( amb ( amb Fig 7. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values BC846BPN_1 Product data sheet 65 V, 100 mA NPN/PNP general-purpose transistor 006aaa536 1 ...
Page 8
... NXP Semiconductors (pF MHz amb Fig 9. TR1 (NPN): Collector capacitance as a function of collector-base voltage; typical values 600 h FE (1) 400 (2) 200 ( ( 100 C amb ( amb ( amb Fig 11. TR2 (PNP): DC current gain as a function of collector current; typical values BC846BPN_1 Product data sheet 65 V, 100 mA NPN/PNP general-purpose transistor ...
Page 9
... NXP Semiconductors (V) 0.8 0.6 0 amb Fig 13. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values 10 V CEsat ( (1) 10 ( 100 C amb ( amb ( amb Fig 15. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values BC846BPN_1 Product data sheet 65 V, 100 mA NPN/PNP general-purpose transistor 006aaa544 1 ...
Page 10
... NXP Semiconductors (pF MHz amb Fig 17. TR2 (PNP): Collector capacitance as a function of collector-base voltage; typical values BC846BPN_1 Product data sheet 65 V, 100 mA NPN/PNP general-purpose transistor 006aab623 C (pF (V) CB Fig 18. TR2 (PNP): Emitter capacitance as a function Rev. 01 — 17 July 2009 BC846BPN MHz amb of emitter-base voltage ...
Page 11
... NXP Semiconductors 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is suitable for use in automotive applications. 9. Package outline Fig 19. Package outline SOT363 (SC-88) 10 ...
Page 12
... NXP Semiconductors 11. Soldering Fig 20. Reflow soldering footprint SOT363 (SC-88) 4.5 Fig 21. Wave soldering footprint SOT363 (SC-88) BC846BPN_1 Product data sheet 65 V, 100 mA NPN/PNP general-purpose transistor 2.65 1.5 2.35 0 1.8 1.3 1.3 2.45 5.3 Rev. 01 — 17 July 2009 BC846BPN ...
Page 13
... NXP Semiconductors 12. Revision history Table 10. Revision history Document ID Release date BC846BPN_1 20090717 BC846BPN_1 Product data sheet 65 V, 100 mA NPN/PNP general-purpose transistor Data sheet status Change notice Product data sheet - Rev. 01 — 17 July 2009 BC846BPN Supersedes - © NXP B.V. 2009. All rights reserved. ...
Page 14
... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
Page 15
... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 11 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 10 Packing information Soldering ...