PMBT3906YS,115 NXP Semiconductors, PMBT3906YS,115 Datasheet - Page 7

• Manufacturer Part Number: PMBT3906YS,115
• Description: TRANS PNP/PNP 40V 200MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of PMBT3906YS,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061455115; PMBT3906YS T/R; PMBT3906YS T/R

NXP Semiconductors
8. Test information
PMBT3906YS_2
Product data sheet
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is
suitable for use in automotive applications.
Fig 7.
Fig 8.
(1) T
(2) T
(3) T
I
Collector-emitter saturation voltage as a function of collector current; typical
values
Test circuit for switching times
C
amb
amb
amb
/I
B
= 10
= 150 C
= 25 C
= 55 C
oscilloscope
V
CEsat
(V)
10
10
V
Rev. 02 — 13 May 2009
I
1
1
2
10
(probe)
40 V, 200 mA PNP/PNP general-purpose double transistor
450
1
R1
1
(1)
(2)
(3)
R2
R
B
V
BB
10
R
C
V
CC
DUT
V
10
o
mgd624
2
I
006aab122
C
(probe)
(mA)
450
PMBT3906YS
10
oscilloscope
3
© NXP B.V. 2009. All rights reserved.
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