PMBT3906YS,115 NXP Semiconductors, PMBT3906YS,115 Datasheet - Page 10

• Manufacturer Part Number: PMBT3906YS,115
• Description: TRANS PNP/PNP 40V 200MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of PMBT3906YS,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061455115; PMBT3906YS T/R; PMBT3906YS T/R

NXP Semiconductors
12. Revision history
Table 10.
PMBT3906YS_2
Product data sheet
Document ID
PMBT3906YS_2
Modifications:
PMBT3906YS_1
Revision history
Release date
20090513
20080306
•
Figure
4: amended
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 13 May 2009
40 V, 200 mA PNP/PNP general-purpose double transistor
Change notice
-
-
PMBT3906YS
Supersedes
PMBT3906YS_1
-
© NXP B.V. 2009. All rights reserved.
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