PMBT3906YS,115 NXP Semiconductors, PMBT3906YS,115 Datasheet - Page 10
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PMBT3906YS,115
Manufacturer Part Number
PMBT3906YS,115
Description
TRANS PNP/PNP 40V 200MA SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.PMBT3906YS115.pdf
(12 pages)
Specifications of PMBT3906YS,115
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
350mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.2 A
Power Dissipation
350 mW
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934061455115
PMBT3906YS T/R
PMBT3906YS T/R
PMBT3906YS T/R
PMBT3906YS T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMBT3906YS,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
12. Revision history
Table 10.
PMBT3906YS_2
Product data sheet
Document ID
PMBT3906YS_2
Modifications:
PMBT3906YS_1
Revision history
Release date
20090513
20080306
•
Figure
4: amended
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 13 May 2009
40 V, 200 mA PNP/PNP general-purpose double transistor
Change notice
-
-
PMBT3906YS
Supersedes
PMBT3906YS_1
-
© NXP B.V. 2009. All rights reserved.
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