PMBT3904YS,115 NXP Semiconductors, PMBT3904YS,115 Datasheet - Page 5

• Manufacturer Part Number: PMBT3904YS,115
• Description: TRANS NPN/NPN 40V 200MA SOT-363
• Manufacturer: NXP Semiconductors

Specifications of PMBT3904YS,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Mounting Type: Surface Mount
• Power - Max: 350mW
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Transistor Type: 2 NPN (Dual)
• Frequency - Transition: 300MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Collector/base Gain Hfe Min: 180
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: NPN/NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 200 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 230 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061454115

NXP Semiconductors
7. Characteristics
PMBT3904YS_1
Product data sheet
Table 8.
T
Symbol Parameter
Per transistor
I
I
h
V
V
f
C
C
NF
t
t
t
t
t
t
CBO
EBO
T
d
r
on
s
f
off
amb
FE
CEsat
BEsat
c
e
= 25 C unless otherwise specified.
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
transition frequency
collector capacitance
emitter capacitance
noise figure
delay time
rise time
turn-on time
storage time
fall time
turn-off time
Characteristics
Rev. 01 — 12 May 2009
40 V, 200 mA NPN/NPN general-purpose double transistor
Conditions
V
V
V
I
I
I
I
V
f = 100 MHz
V
f = 1 MHz
V
f = 1 MHz
V
R
f = 10 Hz to 15.7 kHz
V
I
C
C
C
C
Bon
CB
EB
CE
CE
CB
BE
CE
CC
S
I
I
I
I
I
= 10 mA; I
= 50 mA; I
= 10 mA; I
= 50 mA; I
C
C
C
C
C
= 1 k ;
= 1 mA; I
= 30 V; I
= 6 V; I
= 1 V
= 20 V; I
= 5 V; I
= 0.5 V; I
= 5 V; I
= 3 V; I
= 0.1 mA
= 1 mA
= 10 mA
= 50 mA
= 100 mA
C
E
C
C
E
B
B
B
B
C
= 0 A
= i
C
= 100 A;
Boff
= 10 mA;
= 0 A
= 1 mA
= 5 mA
= 1 mA
= 5 mA
= 10 mA;
= i
e
= 1 mA
= 0 A;
c
= 0 A;
PMBT3904YS
Min
-
-
60
80
100
60
30
-
-
650
-
300
-
-
-
-
-
-
-
-
-
Typ
-
-
180
180
180
105
50
75
120
750
850
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
50
50
-
-
300
-
-
200
300
850
950
-
4
8
5
35
35
70
200
50
250
Unit
nA
nA
mV
mV
mV
mV
MHz
pF
pF
dB
ns
ns
ns
ns
ns
ns
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