PMBT3904YS,115 NXP Semiconductors, PMBT3904YS,115 Datasheet

TRANS NPN/NPN 40V 200MA SOT-363

PMBT3904YS,115

Manufacturer Part Number
PMBT3904YS,115
Description
TRANS NPN/NPN 40V 200MA SOT-363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBT3904YS,115

Package / Case
SC-70-6, SC-88, SOT-363
Mounting Type
Surface Mount
Power - Max
350mW
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Transistor Type
2 NPN (Dual)
Frequency - Transition
300MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Collector/base Gain Hfe Min
180
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
NPN/NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
200 mA
Maximum Dc Collector Current
200 mA
Power Dissipation
230 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934061454115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN/NPN general-purpose double transistor in a SOT363 (SC-88) very small
Surface-Mounted Device (SMD) plastic package.
Table 1.
I
I
I
Table 2.
Type number Package
PMBT3904YS SOT363
Symbol
Per transistor
V
I
h
C
FE
CEO
PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
Rev. 01 — 12 May 2009
General-purpose double transistor
Board-space reduction
General-purpose switching and amplification
Product overview
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
NXP
JEITA
SC-88
Conditions
open base
V
I
C
CE
= 10 mA
= 1 V;
PNP/PNP
complement
PMBT3906YS
NPN/PNP
complement
PMBT3946YPN very small
Min
-
-
100
Typ
-
-
180
Product data sheet
Package
configuration
Max
40
200
300
Unit
V
mA

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PMBT3904YS,115 Summary of contents

Page 1

PMBT3904YS 40 V, 200 mA NPN/NPN general-purpose double transistor Rev. 01 — 12 May 2009 1. Product profile 1.1 General description NPN/NPN general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Table 1. Type number ...

Page 2

... NXP Semiconductors 2. Pinning information Table 3. Pin Ordering information Table 4. Type number Package PMBT3904YS SC-88 4. Marking Table 5. Type number PMBT3904YS [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PMBT3904YS_1 Product data sheet 40 V, 200 mA NPN/NPN general-purpose double transistor Pinning Description ...

Page 3

... NXP Semiconductors 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per transistor V CBO V CEO V EBO tot Per device P tot amb T stg [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Fig 1. ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 7. Symbol Per transistor R th(j-a) R th(j-sp) Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint th(j-a) 0.75 (K/W) 0.5 0.33 2 0.2 10 0.1 0.05 0.02 0. FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; ...

Page 5

... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol Parameter Per transistor I CBO I EBO CEsat V BEsat off PMBT3904YS_1 Product data sheet 40 V, 200 mA NPN/NPN general-purpose double transistor Characteristics Conditions collector-base cut-off current emitter-base cut-off current DC current gain 0 100 mA C collector-emitter ...

Page 6

... NXP Semiconductors 600 h FE 400 (1) (2) 200 ( ( 150 C amb ( amb ( amb Fig 3. DC current gain as a function of collector current; typical values 1 (V) (1) 0.8 (2) ( amb ( amb ( 150 C amb Fig 5. Base-emitter voltage as a function of collector current; typical values PMBT3904YS_1 Product data sheet ...

Page 7

... NXP Semiconductors (1) T (2) T (3) T Fig 7. 8. Test information Fig 8. PMBT3904YS_1 Product data sheet 40 V, 200 mA NPN/NPN general-purpose double transistor 1 V CEsat (V) ( 150 C amb = 25 C amb = 55 C amb Collector-emitter saturation voltage as a function of collector current; typical values R (probe) oscilloscope 450 Test circuit for switching times Rev. 01 — ...

Page 8

... NXP Semiconductors 9. Package outline Fig 9. 10. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package Description PMBT3904YS SOT363 [1] For further information and the availability of packing methods, see [2] T1: normal taping [3] T2: reverse taping ...

Page 9

... NXP Semiconductors 11. Soldering Fig 10. Reflow soldering footprint SOT363 (SC-88) 4.5 Fig 11. Wave soldering footprint SOT363 (SC-88) PMBT3904YS_1 Product data sheet 40 V, 200 mA NPN/NPN general-purpose double transistor 2.65 1.5 2.35 0 1.8 1.3 1.3 2.45 5.3 Rev. 01 — 12 May 2009 PMBT3904YS 0 ...

Page 10

... NXP Semiconductors 12. Revision history Table 10. Revision history Document ID Release date PMBT3904YS_1 20090512 PMBT3904YS_1 Product data sheet 40 V, 200 mA NPN/NPN general-purpose double transistor Data sheet status Change notice Product data sheet - Rev. 01 — 12 May 2009 PMBT3904YS Supersedes - © NXP B.V. 2009. All rights reserved. ...

Page 11

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 12

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 Revision history ...

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