BC857S Fairchild Semiconductor, BC857S Datasheet - Page 4

• Manufacturer Part Number: BC857S
• Description: TRANSISTOR PNP 45V 200MA SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of BC857S

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 125 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 310 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 125
• Minimum Operating Temperature: - 65 C
• Number Of Elements: 2
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 125
• Frequency (max): 200MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Typical Characteristics
40
30
20
10
0
1
V
ce
= 5V
Gain Bandwidth Product
I - COLLECTOR CURRENT (mA)
vs Collector Current
C
10
20
500
400
300
200
100
0
0
(continued)
50
SC70 -6
100 150
25
Ambient Temperat ure
Power Dissipation vs
PNP Multi-Chip General Purpose Amplifier
TE MPE RATURE ( C)
50
75
300
270
240
210
180
150
120
90
60
30
0
100
°
10
t d
125
I - COLLECTOR CURRENT (mA)
Switching Times vs
20
C
Collector Current
IB1 = IB2 = Ic / 10
V
cc
30
150
= 10 V
t f
50
t r
100
t s
200
(continued)
300