BC857S Fairchild Semiconductor, BC857S Datasheet

BC857S

Manufacturer Part Number

BC857S

Description

TRANSISTOR PNP 45V 200MA SC70-6

Manufacturer

Fairchild Semiconductor

Datasheet

1.BC857S.pdf (5 pages)

Specifications of BC857S

Transistor Type

2 PNP (Dual)

Current - Collector (ic) (max)

200mA

Voltage - Collector Emitter Breakdown (max)

45V

Vce Saturation (max) @ Ib, Ic

650mV @ 5mA, 100mA

Dc Current Gain (hfe) (min) @ Ic, Vce

125 @ 2mA, 5V

Power - Max

300mW

Frequency - Transition

200MHz

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Configuration

Dual

Transistor Polarity

PNP

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

45 V

Emitter- Base Voltage Vebo

- 5 V

Continuous Collector Current

0.2 A

Maximum Dc Collector Current

0.1 A

Power Dissipation

310 mW

Maximum Operating Frequency

250 MHz

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

125

Minimum Operating Temperature

- 65 C

Number Of Elements

Collector-emitter Voltage

45V

Collector-base Voltage

50V

Emitter-base Voltage

Collector Current (dc) (max)

200mA

Dc Current Gain (min)

125

Frequency (max)

200MHz

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SC-70

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

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Current page: 1 of 5
Download datasheet (51Kb)

1998 Fairchild Semiconductor Corporation

Symbol

CEO

CES

CBO

EBO

PNP Multi-Chip General Purpose Amplifier

, T

Absolute Maximum Ratings*

Thermal Characteristics

This device is designed for general purpose amplifier applications at collector

currents to 200 mA. Sourced from Process 68.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

stg

Total Device Dissipation

Thermal Resistance, Junction to Ambient

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

SC70-6

NOTE: The pinouts are symmetrical; pin 1 and pin

4 are interchangeable. Units inside the carrier can

be of either orientation and will not affect the

functionality of the device.

Mark: 3C

Derate above 25 C

BC857S

pin #1

Characteristic

Parameter

= 25°C unless otherwise noted

BC857S

Max

300

415

2.4

-55 to +150

Value

200

5.0

Units

mW/ C

Units

C/W

Related parts for BC857S

BC857S Summary of contents

Page 1

... Symbol Characteristic P Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Ambient R JA 1998 Fairchild Semiconductor Corporation 25°C unless otherwise noted A Parameter T = 25°C unless otherwise noted A Value Units 5.0 V 200 mA -55 to +150 C Max Units BC857S 300 mW 2.4 mW/ C 415 C/W 4 ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage (BR)CEO V Collector-Base Breakdown Voltage (BR)CES V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector-Cutoff Current CBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation Voltage ...

Page 3

Typical Characteristics Base-Emitter Saturation Voltage vs Collector Current 1 ° 0.8 ° 0.6 0.4 0 COLLECTOR CURRE NT (mA) C Collector-Cutoff Current vs Ambient Temperature 100 ...

Page 4

Typical Characteristics Gain Bandwidth Product vs Collector Current COLLECTOR CURRENT (mA) C 500 400 300 200 100 0 0 PNP Multi-Chip General Purpose Amplifier (continued) Switching ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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