NST847BDP6T5G ON Semiconductor, NST847BDP6T5G Datasheet - Page 3

• Manufacturer Part Number: NST847BDP6T5G
• Description: TRANSISTOR NPN DUAL 45V SOT-963
• Manufacturer: ON Semiconductor

Specifications of NST847BDP6T5G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 350mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 420 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NST847BDP6T5G; NST847BDP6T5GOSTR

1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
0.0001
0
Figure 3. Base Emitter Saturation Voltage vs.
150°C
I
−55°C
25°C
C
/I
B
= 10
10 mA
Figure 5. Saturation Region
I
C
, COLLECTOR CURRENT (A)
I
0.0001
b
0.001
Collector Current
, BASE CURRENT (A)
30 mA
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0
50 mA
0.001
0.01
C
ob
V
5
cb
Figure 7. Output Capacitance
, COLLECTOR BASE VOLTAGE (V)
I
C
= 100 mA
http://onsemi.com
10
0.01
0.1
15
3
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
0.0001
20
0
−55°C
150°C
25°C
Figure 4. Base Emitter Turn−On Voltage vs.
V
0.5
CE
= 2.0 V
25
1.0
V
Figure 6. Input Capacitance
eb
I
C
C
, EMITTER BASE VOLTAGE (V)
, COLLECTOR CURRENT (A)
ib
1.5
0.001
30
Collector Current
2.0
2.5
3.0
0.01
3.5
4.0
4.5
5.0
0.1