NST847BDP6T5G ON Semiconductor, NST847BDP6T5G Datasheet

NST847BDP6T5G

Manufacturer Part Number

NST847BDP6T5G

Description

TRANSISTOR NPN DUAL 45V SOT-963

Manufacturer

ON Semiconductor

Datasheet

1.NST847BDP6T5G.pdf (4 pages)

Specifications of NST847BDP6T5G

Transistor Type

2 NPN (Dual)

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

45V

Vce Saturation (max) @ Ib, Ic

600mV @ 5mA, 100mA

Dc Current Gain (hfe) (min) @ Ic, Vce

200 @ 2mA, 5V

Power - Max

350mW

Frequency - Transition

100MHz

Mounting Type

Surface Mount

Package / Case

SOT-963

Configuration

Dual

Transistor Polarity

NPN

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

45 V

Emitter- Base Voltage Vebo

6 V

Maximum Dc Collector Current

0.1 A

Power Dissipation

420 mW

Maximum Operating Frequency

100 MHz

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

NST847BDP6T5G
NST847BDP6T5GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NST847BDP6T5G

Manufacturer:

ON Semiconductor

Quantity:

6 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NST847BDP6T5G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

NST847BDP6T5G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 4
Download datasheet (94Kb)

NST847BDP6T5G

Dual General Purpose

Transistor

SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for

general purpose amplifier applications and is housed in the SOT−963

six−leaded surface mount package. By putting two discrete devices in

one package, this device is ideal for low−power surface mount

applications where board space is at a premium.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ 100 mm

2. FR−4 @ 500 mm

3. Dual heated values assume total power is sum of two equally powered channels.

April, 2008 − Rev. 0

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Collector −Emitter Voltage

Collector −Base Voltage

Emitter −Base Voltage

Collector Current − Continuous

Electrostatic Discharge

Total Device Dissipation T

Derate above 25°C (Note 1)

Thermal Resistance, Junction-to-Ambient

(Note 1)

Total Device Dissipation T

Derate above 25°C (Note 2)

Thermal Resistance, Junction-to-Ambient

(Note 2)

Total Device Dissipation T

Derate above 25°C (Note 1)

Thermal Resistance, Junction-to-Ambient

(Note 1)

Total Device Dissipation T

Derate above 25°C (Note 2)

Thermal Resistance, Junction-to-Ambient

(Note 2)

Junction and Storage Temperature Range

The NST847BDP6T5G device is a spin−off of our popular

Low V

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

This is a Pb−Free Device

Characteristic (Dual Heated) (Note 3)

, 200−450

Characteristic (Single Heated)

CE(sat)

, ≤ 0.25 V

Rating

, 1 oz. copper traces, still air.

= 25°C

HBM

Symbol

Class

ESD

, T

CEO

CBO

EBO

qJA

stg

−55 to

Value

+150

Max

100

240

520

280

446

350

357

420

297

6.0

1.9

2.2

2.8

3.4

mW/°C

mAdc

°C/W

Unit

Vdc

°C

†For information on tape and reel specifications,

NST847BDP6T5G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(Note: Microdot may be in either location)

Device

ORDERING INFORMATION

(3)

(4)

MARKING DIAGRAM

http://onsemi.com

NST847BDP6T5G

= Device Code

= Date Code

= Pb−Free Package

CASE 527AD

SOT−963

PLASTIC

(Pb−Free)

SOT−963

Package

(5)

J M G

Publication Order Number:

(2)

8000/Tape & Reel

NST847BDP6/D

Shipping

(1)

(6)

†

Related parts for NST847BDP6T5G

NST847BDP6T5G Summary of contents

Page 1

... NST847BDP6T5G Dual General Purpose Transistor The NST847BDP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device designed for general purpose amplifier applications and is housed in the SOT−963 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space premium ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I C Collector −Emitter Breakdown Voltage (I C Collector −Base Breakdown Voltage ( mA) C Emitter −Base Breakdown Voltage (I = 1.0 mA) E Collector Cutoff Current (V = ...

Page 3

0.9 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 3. Base Emitter Saturation Voltage vs. Collector Current 1.0 0.9 0.8 0.7 50 ...

Page 4

... C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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